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Topical areas and invited speakers 


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Fundamentals of Crystal Growth


Boaz Pokroy

Israel Institute of Technology

Invited Speakers


Maria Sushko


James De Yoreo


Peter Vekilov

University of Houston

Jeffrey Rimer

University of Houston

Modeling of Crystal Growth Processes


Talid Sinno

University of Pennsylvania

Invited Speakers


Jeff Derby

University of Minnesota


Lijun Liu

Xi'an Jiaotong University, China


Julia Dschemuchadse

Cornell University


Amish Patel

University of Pennsylvania


Baron Peters

University of Illinois


Chris Mundy

Pacific Northwest National Laboratory


Jeremy Palmer

University of Houston

Natasha Dropka

Leibniz Institute for Crystal Growth

Berlin, Germany

Chung-Wen Lan

National Taiwan University

Taipei, Taiwan

Bulk Crystal Growth  


Aleksandar Ostrogorsky

Illinois Institute of Technology

Robert Feigelson

Stanford University

Zhiqiang Mao

Pennsylvania State University

Andrew Novoselov

II-VI Aerospace & Defense

Biological and Biomimetic Materials


David Kisailus

UC Irvine


Jinhui Tao

Pacific Northwest National Laboratory


Atsushi Arakaki

Tokyo University of Agriculture and Technology


In this session, we will discuss crystallization of biological or biomimetic materials as well as self-assembly mechanisms. This includes, but will not be limited to: assembly and / or function of organic (e.g., polysaccharides, proteins, peptides, peptoids, polymers, DNA and RNA) materials, and nucleation, growth and phase transformations in biological or biomimetic materials as well as the subsequent impact on performance. In addition, interactions at the inorganic-organic interface, biomimetic crystallization and bioinspired syntheses as well as modeling of crystallization of biological structures and synthetic materials will be discussed. In this interdisciplinary session, state-of-the-art experimental procedures and theoretical approaches will be discussed and thereby further the understanding of fundamental principles as well as the possibilities for various applications.


Keynote Speakers:


Helmut Colfen (University of Konstanz, Germany)


Lara Estroff (Cornell University, USA)


Rajesh Naik (Air Force Research Lab, USA)

Invited Speakers:


Hermann Ehrlich (Technische Universitat, Freiberg, Germany)


Laurie Gower (University of Florida, USA)


Michiko Nemoto (Okayama University, Japan)


Fabio Nudelman (University of Edinburgh, UK)


Boaz Pokroy (Technion Institute of Technology, Israel)

Abe Satoshi (Tokyo Institute of Technology, Yokohama, Japan)


Ruikang Tang (Zhejiang University, China)


Takafumi Ueno (Tokyo Institute of Technology, Japan)


Kimberly Weirich (Clemson University, USA)


Dongfeng Xue (Chinese Academy of Sciences, Shenzhen, China)

Shuai Zhang (University of Washington)

Thin film growth, epitaxy, and superlattices


Ferdinand Scholz

University of Ulm, Germany


Masakazu Sugiyama

University of Tokyo



This session will focus on recent experimental and theoretical developments as well as industrial applications in the epitaxial growth, structure, and properties of thin films. Topics of interest include kinetics and growth mechanisms, chemical reactions at surfaces, assembly at surfaces and interfaces, atomic layer deposition, nanostructured surfaces, ordering and phase transitions, as well as studies aimed at characterizing the optical, electronic, magnetic, and mechanical properties of thin films.


Invited Speakers:


Dr. Ewa Grzanka

Institute of High Pressure Physics, Polish Academy of Sciences Warsaw, Poland

“Studies towards InGaN QW homogenization and decomposition via metal vacancies”


Prof. Dr. Kimberly Dick Thelander

Centre for Analysis and Synthesis, NanoLund, Solid State Physics Lund University, Sweden

“Understanding the dynamics of III-V nanostructure growth with in-situ TEM”


Prof. Motoaki Iwaya

Meijo University, Nagoya, Japan

“MOVPE and in situ analysis for hetero-junctions, tunnel-junctions and DBRs”

Lattice-mismatched epitaxy and alternative epitaxial substrates


David Lackner

Fraunhofer ISE



High quality (hetero-) epitaxy usually needs mono-crystalline substrates. The typical substrates, often from binary materials like GaAs, InP, InAs, GaSb or even Ge, cause severe constraints due to the limited choice of lattice constants, thermal misfit or simply because of cost. In this session, solutions to overcome these limitations by either engineered substrates or lattice mismatched (metamorphic) epitaxy shall be discussed.  Ideally the epitaxy layer or device quality for growth on such engineered substrates or metamorphic buffers is presented.

Invited Speaker

Vladimir Tassev

Air Force Research Laboratory

2D materials, surfaces and interfaces

Symposium Chair: Kevin M. Daniels (University of Maryland)


Co-chairs: Cheng Gong (University of Maryland) and Soaram Kim (University of Maryland)


Research on the synthesis and the applications of various low-dimensional materials (0D, 1D, and layered 2D materials) are the themes of this symposium. These materials' unique properties, differing or exceeding those of their bulk crystal counterparts, are of potential scientific and technological importance. Materials of central importance to this symposium include 2D layered materials such as graphene, boron nitride, transition metal dichalcogenides and oxides, topological insulators superconductors, Xenes, etc., as well as their 0D and 1D counterparts and various heterostructural combinations. Due to widespread interest, a Special Topic Session on 2D magnetism is organized. Magnetism plays pivotal roles for a wide range of significant technologies such as data storage and biomedical imaging and continues to exhibit new phenomena in emerging materials at reduced dimensions. Magnetic 2D layered materials, experimentally discovered in 2017, are ideal platforms where both crystalline structural order and long-range magnetic order coexist in the atomic-thin region. The integration of 2D magnets with disparate electronic and photonic 2D materials opens up remarkable opportunities for designer quantum heterostructures with previously inaccessible magnetoelectric and magneto-optical properties. This Special Topic Session will collect abstracts on 2D magnet physics and modeling, various synthesis and characterization of 2D magnets and related heterostructures, and quantum transport and tunneling properties of 2D materials-based spintronic devices. This symposium aims to explore, through the contributions of leading researchers, new methodologies and breakthroughs in low-dimensional materials and identify constraining issues to future development.

List of invited speakers for the Symposium:

Jimmy Kotsakidis     Monash University

Andrew May             Oak Ridge National Laboratory

Angela Hight Walker National Institute of Standards and Technology

Matthias Batzill         University of South Florida

Shoufeng Lan            Texas A&M University

Xianglin Ke               MICHIGAN STATE UNIVERSITY

Ziqiang Qiu               UC Berkeley

Xi  Ling                     Boston University

Liuyan Zhao             University of Michigan

Paola Barbara           Georgetown University

Petr Neugebauer       CEITEC

Cheng Gong             University of Maryland

Soaram Kim             University of Maryland

Trevor Rhone            Rensselaer Polytechnic Institute

Peter Sutter               University of Nebraska-Lincoln

Nanocrystals, quantum dots, and nanowires


Jonathan Owen

Columbia University

Invited Speakers


Celso de Mello Donega


Benjamin Abecassis


Sanjit K. Ghose



David J. Norris

ETH Zurich


Sandrine Ithurria


Advanced Crystal Growth Technology and Equipment


Rajan Rengarajan

II-VI, Inc 

Jeganathan Kulandaivel

Bharathidasan University



This symposium is open to all areas of crystal growth technolgy and equipment related to crystal growth.  The contributions may include any type of crystals, any crystal growth technology, equipment related to crystal growth, epitaxial growth, processing, crystal characterization, and consumables related to crystal growth. Contributions are welcome from Academic Institutions, Research institutes, and Industries. Contributions may emphasize areas of repeatability, reliability, and sustainability. It welcomes talks from equipment manufacturers and suppliers involved in growth, processing, and diagnostics and from consumables suppliers. While the symposium is geared towards presentation by industrial speakers, researchers and engineers from universities and national laboratories who are presently in the early stages of technology transfer and development are highly encouraged to present in this symposium to showcase their innovations.

Invited Speakers


Danilo Crippa


"A novel 200mm Silicon Carbide Epitaxial Reactor for Power Devices: equipment and process prospectives"


Siddha Pimputkar

Lehigh University

“Pushing the Boundary on Nitride-Synthesis Equipment Technology” 


Dharmalingam Prabhakaran

Oxford University

“Synthesis and Discovery of Quantum Materials”

Nonlinear Optical and Laser Host Materials 


Peter Schunemann

BAE Systems


Kevin Zawilski

BAE Systems



The Nonlinear Optical and Laser Host Materials symposium will focus on two related fields. The first concerns itself with the growth, properties, processing, and device performance of nonlinear optical materials. Topics include, but are not limited to, crystal growth methods, characterization and elimination of defects, enhancements in size, properties and performance, fabrication techniques, and new materials. Papers on both birefringent and quasi-phase-matched nonlinear optical crystals are welcome. The second field covered will focus on laser host materials. Areas of interest are advances in growth techniques for laser crystals and materials for diverse laser applications. Topics include, but are not limited to, new materials, mitigation of defect issues, and scaling in crystal size, power or performance of existing materials by improved growth techniques. Papers on both single crystal and polycrystalline laser host materials are welcome. Talks from all aspects of laser materials are encouraged, as well as results and advances in laser operation.


Invited Speakers


Eugenio Del Re

Univ of Rome-la Sapienza, Italy


Chunhui Yang

Harbin Institute of Technology, PR China


Benoît Boulanger

University Grenoble, FRANCE


Peter Schunemann

BAE Systems

Advanced OMVPE: novel materials and devices


Ryan Lewis

McMaster University



This session seeks participation from the broad OMVPE community: engineers focused on production issues and researchers developing new technology. This session will consider novel materials, as well as novel device applications of more established materials. We seek abstracts on materials growth, characterization, and how these efforts impact device realization and performance. We also seek abstracts describing the challenges facing industrial efforts and the solutions implemented.


Advanced OMVPE techniques: equipment, epitaxy, and characterization


Bernard Paquette

National Research Council, Canada



New improvements in crystal growth equipment, techniques, and characterization unlock new potential in terms of materials grown, their properties, as well as process control. This session focuses on recent developments in OMVPE that provide new capabilities in materials growth, monitoring of growth, or characterization of grown material, as well as improvements in material properties, measurement, or industrial application of OMVPE.

III-V Epitaxial Growth for Devices


Luke Mawst

University of Wisconsin-Madison


Nelson Tansu

The University of Adelaide, Australia



The III-V Epitaxial Growth for Devices symposium solicits papers on recent advances in the epitaxial growth of III-V materials for device application including; growth techniques for achieving novel device architectures or higher device performance levels, studies regarding the impact of material properties on device performance, device integration through growth, and the growth of emerging III-V materials for device applications.


Invited Speakers


Enrica Mura,

Tyndall National Institute, Ireland


Josh Brown

BluGlass Ltd, Australia


Kerstin Volz

Philipps-Universität Marburg,


III-V Wide Bandgap Nitride Semiconductors and Devices


Ramon Collazo

NC State University



Ronny Kirste

Adroit Materials Inc




III-V Nitride semiconductors have found widespread application in optoelectronics, power electronics, for detectors, and others. In this symposium, the growth of single crystal substrates, epitaxial layers and devices is discussed. The focus includes all aspects of fundamental and applied research related to nitride semiconductors.


Invited Speakers


Anthony Rice

Sandia National Laboratories, USA


Rafael Dalmau

HexaTech, Inc. USA

III-Vs on Silicon


Bill McMahon

National Renewable Energy Lab



The growth of III-V compound semiconductors on silicon has long been a challenge and an opportunity. This symposium invites papers that deal with all areas of the formation of III-V's on silicon, including growth, characterization, simulation, stress management and device results. This session includes all III-V materials; arsenides, phosphides and nitrides.


Invited Speakers


Tyler Grassman

The Ohio State University


Thomas Hannappel

Technische Universität Ilmenau


Narrow Bandgap Semiconductors and Devices


Simon Watkins

Simon Fraser University



Narrow gap materials are attracting increasing attention due to their applications in infrared emitters and detectors, particularly for remote sensing and security applications.  This session will highlight the crystal growth of narrow bandgap materials as well as their device applications. Topics of interest include novel methods of crystal growth, novel materials, enhanced device functionality through bandgap engineering, advanced device designs, and other topics.


Invited Speakers


James Gupta

National Research Council of Canada


Sergey Suchalkin

Stony Brook University, Stony Brook, NY


Silicon Carbide and Gallium Oxide Materials and Devices


Govindhan Dhanaraj

Pallidus Inc


Michael Dudley

Stony Brook University, Stony Brook, NY


Balaji Raghothamachar

Stony Brook University, Stony Brook, NY



Wide bandgap semiconductors silicon carbide and gallium oxide are being developed for power electronic applications. Silicon carbide technologies have been developed for more than 30 years and considered the mainstay in power electronics while gallium oxide has garnered considerable interest in recent years. The symposium will cover all aspects of the development of both materials and provide information on the state-of-the-art. Topics covered will include bulk and thin film growth; structural and point defect characterization; defect engineering techniques; growth chamber design and modeling; doping and carrier lifetime control techniques; power device structures and fabrication technologies; device characterization and modeling.


Invited Speakers


Zbigniew Galazka


Victor Veliadis

Executive Director and CTO, Power America and NC State University


Roberto Fornari

Università di Parma, Italy


Elif Balkas

Wolfspeed, USA


Andrew Allerman



Allen Brady


Alex Galyukov

​STR US, Inc.


Materials for photovoltaics and other energy technologies


John Geisz

National Renewable Energy Lab



This session focuses on the growth of crystalline materials for photovoltaics and other energy technologies, such as thermoelectrics and piezoelectric. Single- and poly-crystalline silicon devices currently dominate the rapidly growing photovoltaic industry, but perovskite, CdTe, CIGS, earth abundant thin films and high efficiency III-V solar cells are emerging materials for cost effective power generation. Novel materials and devices for power generation are encouraged topics for this session.


Invited Speakers


David Lackner

Fraunhofer Institute for Solar Energy Systems ISE

Freiburg, BW, Germany


Mohan Narayanan

Clean Energy Associates

Denver, CO


Parthiv Daggolu

Leading Edge Equipment Technologies

Wilmington, Massachusetts


Eric Colegrove


Characterization techniques for bulk and epitaxial crystallization



Michael Dudley

Stony Brook University


Xianrong Huang

Advanced Photon Source

Argonne National Laboratory, USA


Sakiko Kawanishi

Tohoku University, Japan


Maria Tsoutsouva

Norwegian University of Science and Technology, Norway.

Researchers from around the world will gather at this virtual event to be held as part of the 22nd American Conference on Crystal Growth and Epitaxy (ACCGE-22) and 20th US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-20) ( which will be an online conference held August 2-4, 2021 to share research with their colleagues who are actively engaged in advances in characterization techniques relevant to bulk and epitaxial crystallization. This symposium features presentations addressing issues of current and future interest, covering both theoretical and experimental work. Topics to be covered include advances in the understanding of the origin of defects in crystals, their behavior during and after the growth process and the influence of these defects on the performance of the particular intended device application. Featured will be presentations about state-of-the-art developments and applications where the complex nature of materials is recognized. Additionally, discussions are anticipated on the applications and possibilities for multi-technique measurements of interdependent parameters and the evaluation of the data through sophisticated computer analyses.


Invited Speakers


Takeshi Yoshikawa

University of Tokyo, Japan


Fumihiro Fujie

Nagoya University, Japan


Jaime Frietas, Jr.



Sage Bauers



Nadeemullah Mahadik



Christian Reimann

Fraunhofer Inst., Germany

Symposia focusing on hot issues of the science and practice of crystal growth:


Symposium on Twisted Crystals



Bart Kahr

New York University




Invited Speakers


Stephanie Lee



David Amabilino

U. Nottingham


Willem Noorduin

AMOLF Amsterdam


Eli Sutter

University of Nebraska-Lincoln


Yuzhou Zhao

PhD Student U. Wisconsin

Symposium on Metal Nanoparticle Nucleation and Growth


Hong Yang


Invited Speakers


Ou Chen

Brown University (USA)


Hongyou Fan

Sandia National Lab


Sara Skrabalak

Indiana University


Jianping Xie

National University of Singapore


Symposium on Nucleation and Growth in Microfluidics


Stéphane Veesler


Nadine Candoni



Romain Grossier 



This last decade, microfluidics technology has proved its efficiency to study crystallization fundamentals in chemistry and biology. This symposium will give an opportunity to the crystal growth community to present and discuss about the latest advances in this field of research. Presentations and discussions will focus on experimental and theoretical aspect of phase separation and crystal growth studies.


Invited Speakers


Simon Kuhn

KU Leuven

Leuven, Belgium


Charline Gerard

​ Technologie Servier

Orléans, France


Third Symposium on Ferroelectric Crystals and Textured Ceramics


Zuo-Guang Ye

Simon Fraser University


Shujun Zhang

University of Wollongong, Australia

Invited Speakers


Yunfei Chang

Harbin Institute of Technology, China


Sandy Cochran

University of Glasgow, UK


Lynn Ewart

Naval Undersea Warfare Center, USA


Peter Kabakov

University of Wollongong, Australia


Ho-Yong Lee

Ceracomp Inc., South Korea


Fei Li

Xi’an Jiaotong University, China


Yuji Noguchi

Kumamoto University

Kumamoto, Japan


Fifth Symposium on 2D and Low Dimensional Materials

Symposium Chair: Kevin M. Daniels (University of Maryland)

Co-chairs: Cheng Gong (University of Maryland) and Soaram Kim (University of Maryland)

Boron Nitride Epitaxial Growth and Characterization Symposium


Siddha Pimputkar

Lehigh University


James Edgar

Kansas State University



Boron nitride (BN) has recently emerged as a material of choice for a wide array of technologically important application areas including deep-UV optoelectronics, power/RF electronics, neutron detectors, single photon/electron emitters, and super-capacitors. BN exists in three different crystalline forms: hexagonal, cubic and wurtzite resulting in a wide range of material properties, quite in analogy to carbon taking on a wide range of extreme properties resulting from structures ranging from diamond to graphite to graphene. Despite BN’s exciting material properties, the full potential of BN has yet to be realized at scale due to challenges in its large area, high quality, reliable synthesis in the desired polymorph. A lack of native substrates requires sophisticated approaches to overcome challenges brought on by heteroepitaxial constraints. This symposium explores recent advances in boron nitride synthesis (all polymorphs) with a particular focus on its epitaxial growth. Resulting material properties and defects will be discussed along with general characterization of this material and determination of metrics to assess ‘quality’ of synthesized materials. 

Invited Speakers

Ishwara B. Bhat

Rensselaer Polytechnic Institute, USA, 

“Properties of Hexagonal Boron Nitride Grown on Sapphire and Silicon Substrates"


Jianlin Liu

University of California, Riverside, USA,

"Two-dimensional hexagonal boron nitride: from molecular beam epitaxial growth to devices” 


Sergei Novikov

University of Nottingham, UK,

“High-temperature MBE of hBN for single-photon emitters, deep-ultraviolet and lateral heterostructures.”


Michael Snure

Air Force Research Lab, USA, 

"Development of CVD grown hBN for scalable 2D electronics"


Takashi Taniguchi

International Center for Materials Nanoarchitectonics (NIMS), Japan,

“Synthesis of BN crystals by using solvent growth and their defect characterization”

Symposium on Detector Materials: Scintillators and Semiconductors


Henry Chen

Brimrose Corporation


Ei Ei Brown

US  DEVCOM Army Research Laboratory



The past decades have seen extraordinary advances in materials science and engineering, cutting across the full range of materials classes.  Many of these developments have been generally driven by nanotechnology as well as materials for quantum information, computational materials science, and green energy. While world attention has been focusing on these new emerging fields, one area that seems to under-receive the attention is detector materials, despite impressive breakthroughs have been continuously produced in various classes of materials in the field of radiation detection technologies.


This symposium seeks to share and advance the latest developments in scintillators and semiconductors, the two major nuclear radiation detector materials that have continuously grown, in multifold rate in the last 20 years, driven mainly by high applications demands in the fields of medical imaging and applications (SPECT, TOF-PET, PCCT…), homeland security, as well as scientific research (high energy physics, planetary science…). In fact, the applications of solid-state detector materials, both semiconductors and scintillators, encompass not just ionizing radiations (x-rays, gamma-rays, particles) but also non-ionizing radiations (infrared, THz…) and thus will be covered by this symposium.  The symposium also seeks to cover advances in crystal growth, characterization, and device performance of new detector materials such as hybrid materials (e.g., perovskites), composite materials like nanocomposite scintillators as well as other novelties. A special session will also be organized for attendees to bring up issues for shared discussions, along with other topics of relevance to the audience.

Invited Speakers


R. Radhakrishnan Sumathi


Berlin, Germany


Irfan Kuvvetli

Technical University of Denmark

Kgs Lyngby, Denmark


Shariar Motakef



Kevin Pritchard

National Institute of Standards and Technology


Luis Stand

University of Tennessee - Knoxville


Krishna C. Mandal

University of South Carolina, Columbia

“High-resolution nuclear radiation detectors on 4H-SiC epitaxial layers”


Mark Derzon

Gold Standard Radiation Detection, Inc.,

“Suggested Material and Semiconductor Research to Improve Detectors for National Security and Civil Defense”


Rastgo Hawrami

Fisk University

“Latest Development on Advanced Tl-based Scintillator Crystals for Radiation Detection and Medical Imaging”

Elsa Ariesanti

Fisk University

“Advanced Inorganic Halide Ceramic Scintillators.” 


Henry Chen

Brimrose Technology Corp.

“Mercurous Bromine Hg2Br2 as the next generation scintillator for space mission, high energy physics, defense and security applications”

Alexandru Moldovan - Crystal Summit - Di
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