Growth of crystalline silicon and other photovoltaic materials

Session Chairs: Juris Kalejs, RWE SCHOTT Solar, Howard Branz, National Renewable Energy Laboratory, and Stefan Gall, Hahn-Meitner-Institut Berlin

Crystal growth is critical to silicon, III-V and other photovoltaic technologies. This Session will cover all areas of crystal silicon growth, including the theory and practice of melt growth, molecular beam epitaxy, chemical vapor deposition (CVD), solid-phase recrystallization of amorphous silicon, and metal-induced crystallization. Recent advances in toward deposition of crystal Si on low-cost substrates held below the Si melting temperature will be emphasized. There will be a joint session with the Workshop on Organometallic Vapor Phase Epitaxy to highlight issues in the growth of III-V materials for photovoltaics. Papers on epitaxial growth of other materials for photovoltaics are also encouraged.

Invited Speakers:

Armin Aberle, University of New South Wales, Australia
Fritz Falk, Institute for Physical High Techology Jena, Germany
John Geisz, National Renewable Energy Laboratory
Stefan Reber, Fraunhofer Institute for Solar Energy Systems, Freiburg, Germany
Martin Stutzmann, Technical University of München, Germany
Lili Zheng, State University of New York Stony Brook