This symposium is co-hosted by the 161st Committee of the Japan Society for the Promotion of Science (JSPS)

The International Symposium on Laser and Nonlinear Optical Materials (ISLNOM) provides a unique forum for discussing recent progress in the field of optical and optoelectronic materials, including growth technology, device applications, performance, and materials characterization. It is the purpose of this symposium to bring together scientists and engineers from around the World (Asia, Europe, Russia and the United States) to discuss the most exciting new developments in this field. It covers a wide range of materials, including oxides, fluorides, nitrides, II-VI and III-V compounds. In recent years other topics have also been incorporated into this symposium, including scintillator materials and industrial manufacturing issues.

The first symposium was held in Singapore in 1997 and the second in Lyon, France in 2000. The next symposium, ISLNOM-3, will be held in conjunction with the annual AACG crystal growth conference and the OMVPE-11 (Keystone, Colorado in 2003). Since these symposiums emphasize the most recent advances made in crystal growth technology, both for bulk optical and optoelectronic devices and substrates, its coupling with the AACGE conference, (in which many related topics in crystal growth and epitaxy are covered), as well as the OMVPE workshop (which covers an important semiconductor laser manufacturing technology) gives added benefit to researchers attending any of these meetings

The proceedings will be published in the J Optical Materials. Please submit 3 hard copies of the manuscript to the proceedings editors at the Symposium by July 21,2003, in addition to submitting an electronic version to Georges Boulon at [Contact Information Removed]. (View Advanced Program)

Topics to be covered at the symposium will include, but are not restricted to the following:

• Science and Technology of crystal growth of optical materials
• Bulk crystals, thin films, fibers, shaped crystals
• Crystal characterization, defects and devices
• Oxide, fluoride and nitride solid state lasers
• Semiconductor lasers
• High power lasers
• UV/Blue Lasers
• Nd, Yb, and Cr doped IR Lasers
• Ceramic lasers
• Organic optical materials
• Nonlinear materials
• Second Order nonlinear borates and KTA
• Third order nonlinear materials
• Waveguide structures
• Quasi-phase matching
• Photorefractive and magneto-optic materials
• Scintillators
• Manufacturing issues concerning crystal and device production

Plenary Speakers:

Peter Moulton, Q-Peak, "History of Ti:Al₂O₃ and Doped UV lasers" and
Paul Lecoq, CERN, "New Scintillator Crystals"

 

Invited Speakers:

Speaker	Organization	Presentation Title
G. Aka	ENSCP	Ca4ReO(BO3)3 (Re=Gd,Y,Nd) Crystals for CW Green and Blue Microchip Laser Generation: From Crystal Growth to Laser and Non Linear Optical Properties
N. P. Barnes	NASA Langley Research Center	Compositionally Tuned Lasers For Remote Sensing
B. Boulanger	University J, Fourier	Sphere and Cylinder: Two suitable Geometries in Nonlinear Optics for Crystal Characterization and tunable parametric devices
G. Boulon	Claude Bernard Lyon 1 University	Advances of Yb3+ Doped Crystals for Laser Applications
R. Byer	Stanford University	Recent Advances in Solid State Lasers
B. H. T. Chai	Crystal Photonics	Recent Progress of Scintillators
C. Chen	Chinese Academy of Sciences	Growth and Vacuum-UV Harmonic Generation in KBBF Crystals
C. Denman	AFRL/DELO	Generation of 20W sodium yellow for adaptive optic telescope applications
M. M. Fejer	Stanford University	Recent Progress in Quasi-Phase Matched LiNbO3 & LiTaO3
G. Grabosch & L. Parthier	Schot-Technology Business Unit	CaF2 for DUV Lithography applications
G. Huber, E. Heumann, and Hanno Scheife	University of Hamburg	Advances in Up-conversion Lasers Based on Er3+ and Pr3+
M. Imaeda	NGK Insulators, LTD	Periodically Poled MgO:LiNbO3 Ridge-type Waveguide and Application for Blue-Green SHG Lasers
Y. Kawakami & S. Fujita	Kyoto University	Emission Mechanism in InGaN/GaN-Based Quantum Well Structures
E. Moses	LLNL	The National Ignition Facility: The World's Largest Laser
Y. Mori and T. Sasaki	Osaka University	Development of Optical Nonlinear Crystals for UV Generation at Osaka University
M. Nikl	Czech Institute of Physics	Charge Transfer Luminescence in Yb+3 Containing Compounds
N. Sarukura and T. Fukuda	Institute for Molecular Science, Tohoku University	Application of Various Fluoride Crystals as Ultraviolet Tunable Lasers Media and Optical Materials for F2 Laser Lithography
K. Schaffers	LLNL	High Power Yb:S-FAP Lasers
P. Schunemann	BEA System	New Mid-IR Nonlinear Crystals
I. Sorokina	Techische University Wien	Cr+2 Doped Materials for Lasers & Nonlinear Optics
K. Ueda	University of Electrocommunication	Scalable and High Performance Ceramic Lasers
R. Wallenstein	University Kaiserslautern	GB Lasers for display applications

 

Conference Chairs:

Prof. Robert S. Feigelson, Stanford University, USA
Prof. Tsuguo Fukuda, Chairman of 161st Committee, JSPS; and Professor, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

 

Conference Secretariat:

A. Yoshikawa: Japan [Contact Information Removed]
M. Imaeda: Japan [Contact Information Removed]

 

Organization Chair:

Prof. Robert S. Feigelson
Geballe Laboratory for Advanced Materials
Stanford University
Stanford, CA 94305-4045
USA
PH: 650-723-4007
FAX: 650-723-3752
e-mail: [Contact Information Removed]

 

ISLNOM-3 Program Committee

M.M. Fejer (USA) [Contact Information Removed]
B. Chai (USA)[Contact Information Removed]
G. Boulon (France)[Contact Information Removed]
N. Sarukura (Japan)[Contact Information Removed]
Y. Mori (Japan)[Contact Information Removed]
A. Yoshikawa (Japan) [Contact Information Removed]
S. Payne (USA) [Contact Information Removed]
Y. Mori (Japan) [Contact Information Removed]
P. Schunemann (USA)[Contact Information Removed]

 

Publication Committee

Georges Boulon - Claude Bernard Lyon 1 University [Contact Information Removed]
Satoshi Uda - Tohoku University [Contact Information Removed]

 

Important dates:

Abstract Submission begins January 13, 2003
Abstract Submission ends March 14, 2003
Abstract Acceptance Notification on April 23, 2003
Late News Poster Submission ends June 6, 2003
Lodging reservations due June 6, 2003
Pre-registration due June 13, 2003

 

International Advisory Committee:

B. Chai: USA [Contact Information Removed]
R. Feigelson: USA [Contact Information Removed]
T. Sasaki Japan [Contact Information Removed]
G. Boulon: France[Contact Information Removed]
D. Vivien: France[Contact Information Removed]
H. Gallagher: England [Contact Information Removed]
G. Huber: Germany[Contact Information Removed]
M. Nikl: Czech Republic [Contact Information Removed]
C. Chen: China [Contact Information Removed]
T. Fukuda: Japan [Contact Information Removed]
S. Baldochi: Brazil [Contact Information Removed]
M. Imaeda: Japan[Contact Information Removed]
F. Kuznetsov: Russia [Contact Information Removed]
S. Uda: Japan [Contact Information Removed]