Monday AM, August 2, 1999
  
   
Plenary Session
  
8:00
   Welcoming Remarks – V. J. Fratello and D. L. Kaiser  
8:15
   Robert A. Laudise Memorium – V. J. Fratello and K. A. Jackson  
8:45
   Plenary Speaker –Progress and Potential of Photovoltaics: A Crystal Growth Story, T. Surek, NREL  
9:30
   AACG Award Speaker  
10:15
   Break  
 
Session 1A - Wide Bandgap Materials-I
Session 1B - Oxide Thin Film Growth
  
10:45
 MOCVD Growth of Gallium Nitride Based Materials and Devices, S. P. DenBaars (Invited), University of California, Santa Barbara Growth of Multicomponent Oxides by Liquid Delivery MOCVD, J. F. Roeder*, B. C. Hendrix, I.-S. Chen, T. H. Baum, D. R. Gangaware1, A. I. Kingon1 (Invited), ATMI, 1North Carolina State University  
11:00
11:15
 Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates, L. J. Schowalter1,2*, J. C. Rojo1, G. A. Slack1,2, Y. Shusterman2, R. Wang2, I. Bhat2, G. Arunmozhi2, 1Crystal IS, 2 Rensselaer Polytechnic Institute Epitaxial Oxide Films on Silicon for High-K FET Applications, J. A. Hallmark*, Z. Yu,  R. Droopad, J. Ramdani, J. Curless,  C. D. Overgaard, K. Eisenbeiser, J. M. Finder, D. S. Marshall, J. Wang, W. J. Ooms (Invited), Motorola Labs  
11:30
 Comprehensive Investigation on Metal Organic Vapor Phase Epitaxy of Gallium Nitride for Reactor Design, Jingxi Sun*, J. M. Redwing1, T. F. Kuech, University of Wisconsin-Madison, 1Epitronics  
11:45
 Growth and Characterization of MOVPE GaN Thin Films Using the Alternate Precursor Dimethylhydrazine, E. D. Bourret-Courchesne*, Q. Ye, S. Kellerman, K.-M. Yu, Lawrence Berkeley National Laboratory Double Heteroepitaxial Materials of Si/g-Al2O3/ Si, Zan Yude*, Wang Jun, Han Xiufeng, Li Ruiyun, Wang Yutian, Wang Zhanguo, Lin Lanying, Chinese Acadamy of Science  
12:00
 Lunch Lunch Lunch

 
 
 
 
   
Monday PM, August 2, 1999
  
 
Session 2A - Wide Bandgap Materials-II
Session 2B - Oxide Thin Film Growth
Session 2C - Phase Field Modeling I
2:00
 Structural and Optical Properties of Laterally Overgrown GaN, R. Zhang*, B. Shen, Y. Shi, Y. G. Zhou, K. L. Chen, Y. D. Zheng, L. Zhang1, D. M. Hansen1 T. F. Kuech1, Nanjing University, 1University of Wisconsin Atomic Force Microscopy Study of the Evolution of the Surface Morphology of Bi4Ti3O12 Grown by Molecular Beam Epitaxy, G. W. Brown*, M. E. Hawley1, C. D. Theis2, J. Yeh2, D. G. Schlom2 (Invited), Los Alamos Nat. Lab, Pennsylvania State University Phase-Field Modeling of Dendritic Growth: Coping with Low Undercoolings and Sidebranching, A. Karma*, M. Plapp (Invited), Northeastern University
2:15
 Crystal Growth and Liquid-Phase Epitaxy of GaN, C. Klemenz*, H. J. Scheel, Swiss Federal Institute of Technology-EPFL
2:30
 Study of Mechanisms of AlN Crystal Growth by Sublimation Technique, Yu. N. Makarov*, S. Yu. Karpov1, D. V. Zimina1, E. N. Mokhov2, A. D. Roenkov2, M. G. Ramm2, Yu. A. Vodakov2, Universitat Erlangen-Nürnberg, 1Soft-Impact Ltd., 2A. F. Ioffe Physical-Technical Institute H-Dependent Magnetic Domain Structures in La0.67Sr0.33MnO3 Thin Films, M. E. Hawley*, G. W. Brown, C. Kwon (Invited), Los Alamos National Laboratory Recent Advances in Phase Field Modeling of Crystal Growth, R. F. Sekerka*, Z. Bi, S. Pavlik (Invited), Carnegie Mellon University
2:45
 Growth and Characterization of Bulk Gallium Nitride Materials Grown by the Chemical Vapor Reaction Process (CVRP), M. Callahan*, M. Suscavage, M. Harris, D. Bliss, J. Bailey1, Air Force Research Laboratory, 1Solid State Sciences, Hanscom AFB
3:00
 The Solubility, Permeability and Diffusion Coefficient of Nitrogen in Molten Gallium, L. L. Clarke* D. H. Matthiesen, Case Western Reserve University Wafer Bonding in Thin Film Technology: The Role and Perspectives, M. Alexe*, U. Gosele (Invited), Max Planck Institute Phase Field Modeling of Grain Boundaries, J. A. Warren*, W. C. Carter, R. Kobayashi1, MIT, 1Hokkaido U.
3:15
 Growth of Gallium Nitride from Gallium - Indium Melts, C. W. Deeb* D. H. Matthiesen, Case Western Reserve University Phase-Field Model of the Rapid Solidification of a Binary Alloy, G. B. McFadden* W. J. Boettinger, NIST
3:30
 Break Break Break

 
 
 
 
   
Monday PM, August 2, 1999
  
   
Session 2B Oxide Thin Film Growth
Session 2C - Phase Field Modeling - II
3:45
   Nanoscale Controlled Growth of Epitaxial Perovskite Oxide Thin Films by 90° Off-Axis Sputtering, C. B. Eom* (Invited), Duke University A Phase Field Model of Solidification with Convective Effects, D. M. Anderson*, G. B. McFadden1, A. A. Wheeler2 (Invited), U. North Carolina, 1NIST, 2U. Southampton
4:00
4:15
   Novel Ways for Perfect Oxide Thin Films: Tri-Phase Epitaxy and Step-Flow Epitaxy, M. Kawasaki*, M. Lippmaa, S. Ohashi, N. Nakagawa, B. D. Choi, T. Itoh, K. S. Yun, H. Koinuma (Invited), Tokyo Inst. of Tech. Phase and Solute Fields Across the Solid-Liquid Interface of a Binary Alloy, M. Conti, Universita' degli Studi di Camerino
4:30
   Phase Boundaries and Anisotropy Via Multiple Order Parameter, S. G. Tanoglu*, R. J. Braun, J. W. Cahn1, G. B. McFadden1, A. A. Wheeler2, U. Delaware, 1NIST, 2U. Southampton
4:45
   Imposed Layer-By Layer Growth by Pulsed Laser Interval Deposition, D. H. A. Blank*, G. Koster, G. Rijnders, H. Rogalla (Invited), University of Twente, The Netherlands Modeling Solidification Using the Phase-Field Method and Adaptive-Grid Methods, N. Provatas*, N. Goldenfeld, J. Dantzig (Invited), University of Illinois
5:00
5:15
   Preparation and Characterization of Highly C-Axis Oriented/Epitaxial LiNbO3 Thin Films on LiTaO3 and C-Plane Sapphire Through the Sol-Gel Route, S. D. Cheng*, C. H. Kam, Y. Zhou, J. T. Oha, X. W. Sun, X. Q. Han, H. X. Zhang, Y. L. Lam, Nanyang Technological University
5:30
Reception – Industrial Exhibit

 
 
 
 
   
Tuesday AM, August 3, 1999
  
 
Session 3A - Protein Crystallization-I
Session 3B - Bulk Growth of Semiconductors I: (III-V's)
Session 3C -Relaxor Ferroelectrics
8:00
 Sickle Cell Hemoglobin Polymerization: A Perspective, J. Hofrichter* (Invited), National Institutes of Health A Survey of III-V Semiconductor Bulk Crystal Growth Methods: InP Growth Defect Control and Characterization, D. F. Bliss (Invited), Air Force Research Lab Crystallographic Engineering for Relaxor Ferroelectric Crystals, S.-E. Park, T. R. Shrout (Invited)
8:15
8:30
 Biomolecular Bagels: Studies of Insulin Self-Assembly by Scanning Probe Microscopy, C. M. Yip* (Invited), University of Toronto The Growth and Properties of 90 mm and 110 mm Diameter Indium Phosphide Crystals, R. M. Ware*, K. J. O'Hearn, W. M. Higgins, M. S. Tiernan, T. M. Mirandi, D. J. Carlson (M/A-COM), R. C. Newman, B. R. Davidson (Imperial College of Science , Technology and Medicine) Growth and Characterization of Pb(A1/3Nb2/3)O3 Relaxor Ferroelectric Crystals (A= Mg and Zn), P. Han*, H. C. Materials Corp.
8:45
   Electromagnetic Control of Dopant Segregation During Liquid-Encapsulated Crystal Growth of Compound Semiconductors, N. Ma* D. F. Bliss1 G. G. Bryant1, University of Missouri at Rolla, 1Air Force Research Laboratory Growth and Characterization of PMN and PMNT by the Bridgman Method, S. G. Lee, R. G. Monteiro, M. C. C. Custodio, R. S. Feigelson*, Stanford University
9:00
 Protein Crystallisation on Board STS-95: History of a Solitary Wave, J. M. Garcia-Ruiz*, F. Otalora, M. L. Novella (Invited), CSIC-Universidad de Granada Computational Model for Predicting Thermal Stresses During Crystal Growth, R. Kalan* , A. Maniatty, Rensselaer Polytechnic Institute Ferroelectric Relaxor-Lead Titanate Single Crystals for Echoultrasound Transducers Application, Y. Yamashita*, S. Saito (Invited), Toshiba Corp.
9:15
 H-Vacancy Complex Abundance and Its Influences in N-Type LEC InP, N. Sun1*, J. Zhang1, Y. Zhao1,2, X. Chen1, X. Xu2, M. Gong2, X. Wu3, K. Bi3, S. Fung2, C. D. Beling2, Y. Sun4, G. Li4, L. Wang4, T. Sun1, 1Hebei Semiconductor Research Institute, 2U. of Hong Kong, 3Chinese Academy of Electronic, 4Electr. Mat. Res. Inst.
9:30
 Why and When Protein Crystals Grow Better in Space, A. A. Chernov*1, B. R. Thomas1,2, P. G. Vekilov2, D. Carter3 (Invited), 1Universities Space Research Association/MSFC, 2University of Alabama in Huntsville, 3New Century Pharmaceuticals Growth of Semi-Insulating (SI) GaAs Crystals by the Vapor Pressure Controlled Czochralski (VCz) Method, Ch. Frank*, K. Jacob, M. Neubert, P. Rudolph, Institut für Kristallzüchtung Epitaxial and Oriented Relaxor Ferroelectric-PbTiO3 Films, S. Trolier-McKinstry*, J-P. Maria, V. Bornand, J. H. Park (Invited), Pennsylvania State University
9:45
 Growth of 3" and 4" GaAs Crystals by the VGF Method, G. Müller*, R. Backofen, B. Birkmann und J. Stenzenberger, University Erlangen-Nürnberg  
10:00
 Break Break Break

 
 
 
 
   
Tuesday AM, August 3, 1999
  
 
Session 3A - Protein Crystallization-II
Session 3B - Bulk Growth of Semiconductors I: (III-V's)
Session 3C -Diamond Films and Halides
10:15
 Molecular Mechanisms of Crystallization and Defect Formation, S.-T. Yau, P. G. Vekilov* (Invited), University of Alabama in Huntsville Growth of Inclusion-Free InSb Crystals by Vertical Bridgman Method, P. Mohan*, N.Senguttuvan1, S. Moorthy Babu, P. Ramasamy, Anna University, 1 Shonan Institute of Technology Diamond Film Deposition by a New Chemical Vapor Transport Technique, L. L. Regel*, W. R. Wilcox, Clarkson University,
10:30
 Growth and Characterization of Shaped GaSb Crystals, I. Nicoara*, D. Nicoara, A. G. Ostrogorsky, C. Marin, T. Peignier, University of Alabama in Huntsville X-Ray Photoelectron Spectroscopy Investigation of Substrate Surface Pretreatments for Diamond Nucleation by Microwave Plasma Chemical Vapor Deposition, M.-J. Chiang*, M.-H. Hon, National Cheng-Kung University
10:45
 Molecular Resolution Studies of the Mechanisms of Growth Steps Advancement on Protein and Virus Crystals, Y. G. Kuznetsov*, J. Konnert1, A. J. Malkin, A. McPherson (Invited), University of California, Irvine1, Naval Research Lab Segregation Behavior of Se-Doped GaAs Grown Aboard the USML-1 Spacelab Mission, M. L. Kaforey, J. M. Bly, M. Kassemi, D. H. Matthiesen*, Case Western Reserve University Deposition of Diamond-Like Carbon Films on Polymers by RF Plasma Enhanced Chemical Vapor Deposition, Ming-Jeng Chiang*, Ming-Dow Wu, Weng-Jin Wu and Min-Hsiung Hon, National Cheng-Kung University
11:00
 Segregation Behavior of Se-Doped GaAs Grown Aboard the USML-2 Spacelab Mission, M. L. Kaforey, J. M. Bly, D. H. Matthiesen*, A. Chait1, Case Western Reserve University, 1NASA John H. Glenn Research Center at Lewis Field Structure, Optical and Scintillation Characteristics Control in Mass Production Detectors from Large NaI(Tl) Single Crystals, V. I. Goriletsky*, B. V. Grinyov, K. V. Shakhova, A. N. Panova, S. K. Bondarenko, L. V. Udovichenko, V. I. Sumin, V. I. Bobyr, A. I. Mitichkin, V. A. Kuznetsov, Y. M. Epifanov, S. P. Korsunova, NAS of Ukraine
11:15
 From Small Molecules to Macromolecules: Assessing Trends in Surface Dynamics, J. J. De Yoreo*, T. .A. Land, C. Orme, H. H. Teng1, M. T. McBride, P. M. Dove1, G. Tayhas, R. Palmore2 (Invited), Lawrence Livermore National Laboratory, 1Georgia Institute of Technology, 2University of California at Davis Segregation Control in GaAs Crystals by Double-Crucible Czochralski, J. He, S. Kou*, University of Wisconsin, Madison Influence of Growth Defects on Radiation Hardness of Alkali-Halide Crystals, M. Ratner*, B. Grinyov, Institute for Single Crystals, Ukraine
11:30
 Characterization of Ceramic Springs Used During Growth of Gallium Arsenide Crystals in Microgravity, M. L. Kaforey*, C. W. Deeb, D. H. Matthiesen, Case Western Reserve University Vapour Growth and Characterization of Cadmium Chloride Doped Crystals of Cadmium Iodide, R. Dhingra, Maitreyi College
11:45
 Fundamental Growth Features from Direct AFM Observation of Kinks on the (010) Face of Orthorhombic Lysozyme, A. A. Chernov*, L. N. Rashkovich1, Universities Space Research Association/MSFC, 1Moscow State University  A New High Pressure In-Situ Synthesis and Crystal Growth System for Large Diameter III-V Compound Semiconductors, I. Jafri*, V. Prasad1, D. Bliss2, G. Bryant2, K. Gupta, M. Chandra, H. Zhang1, GT Equipment Technologies, Inc., 1SUNY, Stony Brook, 2USAF Research Lab.  
12:00
 Lunch Lunch Lunch

 
 
 
 
   
Tuesday PM, August 3, 1999
  
 
Session 4A - SiC Crystal and Epitaxial Growth
Session 4B - Bulk Growth of Semiconductors II: (II-VI's)
Session 4C -Detached Growth in Microgravity
2:00
 The Status of SiC Bulk Growth from an Industrial Point of View, S. G. Mueller*, R. C. Glass, H. M. Hobgood, V. F. Tsvetkov, M. Brady, D. Henshall, J. R. Jenny, D. Malta, C. H. Carter, Jr. (Invited), Cree Research, Inc. Bulk Growth of Quasi-Binary Quaternary Alloys, C. Marin, A. G. Ostrogorsky* (Invited), University of Alabama in Huntsville Experimental and Theoretical Modeling of Detached Solidification, L. L. Regel, W. R. Wilcox*, Y. Wang, D. Popov, C. Burkhard (Invited), Clarkson University
2:15
2:30
 Growth and Caracterization of High Purity SiC Single Crystals, G. Augustine*, V. Balakrishna, C. D. Brandt, Science and Technology Center, Northrop Grumman Corporation First Principles Calculations of Liquid Te Compounds at Temperatures Above and Below the Melting Point, V. V. Godlevsky, M. Jain, J. J. Derby*, J. R. Chelikowsky, Army HPC Research Center and University of Minnesota Volatile Impurities in Crystal Growth Systems, W. Palosz, USRA/NASA-MSFC
2:45
 Analysis of Sublimation Growth of Bulk SiC Crystals in Tantalum Container, Yu. Makarov*, S. Karpov1 A. Kulik1, E. Mokhov2, M. G. Ramm2, M. S. Ramm2, A. Roenkov2, Yu. Vodakov2, I. Zhmakin1 University Erlangen-Nürnberg, 1Soft-Impact Ltd., 2A. F. Ioffe Physical Technical Institute Simulation of THM Growth of II-VI Solid Solutions in the Presence of a Rotating Magnetic Field, S. Yesilyurt, S. Motakef, D. C. Gillies1, Cape Simulations, Inc., 1Marshall Flight Space Center Detached Growth of Germanium and Germanium/Silicon, P. Dold*, M. Schweizer, F. Szofran1, K. W. Benz, University of Freiburg, 1NASA-MSFC, SSL
3:00
 A Coupled Heat and Mass Transfer Model for Bulk Growth of Silicon Carbide Crystals, R. H. Ma*, Q.-S. Chen, H. Zhang, V. Prasad, C. M. Balkas, N. K. Yushin, State University of New York at Stony Brook, Sterling Semiconductor, Inc. High Temperature Solution Growth of Chromium Doped CdSe for Tunable Mid-IR Laser Application, J-O. Ndap*, S. U. Egarievwe, X. Ma, K. Chattopadhyay, S. Morgan, A. Burger, Fisk University Determination of the Wetting Angle of Germanium and Germanium-Silicon Melts on Different Substrate Materials, N. Kaiser, A. Croell1, F. R. Szofran, S. D. Cobb, P. Dold2, K. W. Benz2, NASA-MSFC, SSL, 1University Alabama at Huntsville, 2University of Freiburg
3:15
 Break Break Break

 
 
 
 
   
Tuesday PM, August 3, 1999
  
 
Session 4A - SiC Crystal and Epitaxial Growth
Session 4B - Bulk Growth of Semiconductors II: (II-VI's)
Session 4C - Detached Growth in Microgravity
3:30
 Growth and Characterization of 4H and 6H SiC Material, A. R. Powell, S. Wang, G. R. Brandes* (Invited), ATMI Determination of the Solid/Liquid Interface Shape and Resultant Radial Homogeneity in Directionally Solidified Hg0.89 Mn0.11Te, M. W. Price*, R. N. Scripa1, S. L. Lehoczky2, F. R. Szofran2, B. Hanson, Corning Inc., 1U. Alabama at Birmingham, 2NASA Marshall Space Flight Center De-Wetting, from Space to the Earth, T. Duffar*, F. Picca, P. Dusserre, N. Giacometti (Invited), Commissariat à l'Energie Atomique
3:45
 Effect of Steady and Accelerated Crucible Rotation on Large-Scale High-Pressure Vertical Bridgman Growth, A. Yeckel*, J. J. Derby, Army HPC Research Center and University of Minnesota
4:00
 Research Issues in SiC Bulk Crystal Growth Technology, D. H. Hofmann, (Invited), University of Erlangen-Nürnberg Modeling Segregation During the Growth of Ternary Alloys: Retrograde Diffusion Layers, N. Ponde, A. Pandy, J. J. Derby*, Army HPC Research Center and U. Minnesota Ten Years of American Crystal Growth in Microgravity: 1988 - 1998, J. K. Kearns, NASA Marshall Space Flight Center
4:15
 Three Dimensional Modeling of High Pressure Crystal Growth, D. Sun, A. Chatterjee, H. Zhang, V. Prasad*, SUNY at Stony Brook Initial Microgravity Crystal Growth Investigations Planned for the International Space Station, J. K. Kearns, NASA Marshall Space Flight Center
4:30
 Global Numerical Simulation of Heat and Mass Transfer for Sic Bulk Crystal Growth by PVT, L. Kadinski, M. Selder, Yu. Makarov , F. Durst, T. Straubinger1, P. Wellman, D. Hofmann, S. Karpov1, M. Ramm2, University Erlangen-Nürnberg, 1Soft-Impact Ltd., 2A. F. Ioffe Physical Technical Inst.    
4:45
 Modeling of Gas Phase Nucleation During Silicon Carbide Chemical Vapor Deposition, Yu. N. Makarov*, S. Yu. Karpov1, A. N. Vorob'ev2, A. I. Zhmakin3, A. A. Lovtsus4, A. Krishnan5, 1Soft-Impact Ltd., *University of Erlangen-Nürnberg, 2Inst. of Fine Mechanics and Optics, 3Ioffe Physical Technical Institute, 4State Technical University, 5CFD Research Corp.
 
 

 

  
5:00
Poster Session and Reception

 

Tuesday, August 3 - 5:00 - 6:30 PM Poster Session and Late News


Wide Bandgap Materials-II  
Structural Studies on Synthesized Gallium Nitride, M. S. Kumar*, P. Ramasamy, J. Kumar, Anna University  
NLO, Photorefractive and Laser Crystals/NLO  
Crack Free Potassium Lithium Niobate (KLN) Crystals Grown by the Resistance Heating Czochralski Technique, S. Pan*, Y. Wan, J. Xu, Y. Zhang, Shanghai Institute of Optics and Fine Mechanics, Academia Sinica Growth of Paratellurite Crystals: Effect of Axial Temperature Gradient on the Quality of the Crystals, S. Kumaragurubaran*, D. Krishnamurthy, C. Subramanian, P. Ramasamy, Anna University
Glass and Crystal Growth by Floating Zone Pulling Down Method, A. Miyazaki, H. Kimura*, National Research Institute for Metals, X. Jia, Institute of DEO, Minamisawa, Kamiyazawa, Rifu, Miyagi Phase-Matched Crystal Growth of AgGaSe2 and AgGa1-XInxSe2, P. G. Schunemann*, T. M. Pollak, Sanders, A Lockheed Martin Company
Crystal Growth and Structures of New Ln,Nd-Borosilicates, N. I. Leonyuk*, E. P. Shvanskii, E. L. Belokoneva (Lomonosov Moscow State University), G. Bocelli, L. Righi (Centro di Studio per la Strutturistica, Diffrattometrica CNR) Rapid Growth of KDP and DKDP Crystals in the Direction of the Preset Angle of Synchronism, V. I. Salo, I. M. Pritula*, M. I. Kolybayeva,, ST Concern Institute for Single Crystals, Ukraine
Structural Quality and Optical Homogeneity of the Transitional Zone "Seed-Crystal" in Rapidly Grown KH2PO4 Crystals, V. I. Salo*, V. F. Tkachenko, M. I. Kolybayeva, I. M. Pritula, ST Concern Institute for Single Crystals, Ukraine Effect of Seeding on the TSSG Growth of KTiOPO4 Single Crystals, C. V. Kannan, S. Ganesa Moorthy*, F. J. Kumar, C. Subramanian, P. Ramasamy, Anna University
Precipitation in ZnGeP2, C. J. Flynn*, P. C. Smith, M. K. Saker, A. W. Vere, I. R. Grant1, M. Smith1, DERA, Malvern, 1Wafer Technology, Milton Keynes  
NLO, Photorefractive and Laser Crystals/Laser Crystals  
Growth and Optical Characterization of Fluoride Crystals Prepared under CF4 Atmosphere, S. L. Baldochi*, A. M. E. Santo, S. P. Morato (Inst. de Pesquisas Energéticas e Nucleares), K. Shimamura, T. Fukuda (Tohoku U.) Czochralski-Growth of Samarium Doped Strontium Tetraborate Crystals, P. Mikhail*, J. Hulliger, University of Berne
Bridgman Growth of Fluoride Crystals, Shiji Fan*, Hongbing Chen, Guangyu Zhang, Shanghai Institute of Ceramics, Chinese Academy of Sciences Investigation of Cr4+: YAG Crystal As Passive Q-Switch, Xu Tianhua, Li Reining, Li Geping, Peng Weiqing, Zeng Qimeng, Huang Changming, Southwest Institute of Technical Physics
Controlled Reversion of Solid-Liquid Interface of Oxide Crystals During CZ-Growing, Xu Tianhua, Peng Weiqing, Huang Changming, Luo Shuping, Southwest Institute of Technical Physics Research on Thermal Field in CZ-Growing Oxide Crystals, Xu Tianhua, Peng Weiqing, Huang Changming, Luo Shuping, Southwest Institute of Technical Physics
NLO, Photorefractive & Laser Crystals/Oxide & PhotorefractiveCrystals  
FZ-Growth of High Quality Crystals of SrTiO3, A. M. Balbashov*, P. I. Nabokin, D. A. Suptel, Moscow Power Engineering Institute Growth of Bismuth Germanium Oxide Single Crystals by CZ Technique, V. Vaithianathan, A. Claude, P. Santhanaraghavan, R. Gopalakrishan, P. Ramasamy*, Anna University
Containerless Process Using Floating Zone Technique on the Ground, X. Jia1, A. Miyazaki2, H. Kimura*2, 1National Research Institute for Metals, 2Institute of DEO, Minamisawa, Kamiyazawa, Rifu, Miyagi Clusters and Their Properties in Aqueous Solutions of KDP, KCl and Sugar, Lian Li, T. Ogawa*, Data Storage Institute *Gakushuin University
Bulk Growth of Twin Free Nb:Ba1-XSrXTiO3 (BST) Single Crystals, R. Varatharajan*, R. Jayavel, C. Subramanian, P. Ramasamy, Anna University  
Photovoltaics  
Preparation of High-Quality CuGaSe2 Films by Molecular Beam Epitaxy, G. L. Gu, K. Y. Tsai, B. H. Tseng*, National Sun Yat-Sen University Crystal Growth and Photoluminescence of CuInXGa1-XSe2 Alloys, K. Yoshino*, H. Yokoyama, K. Maeda, T. Ikari, Miyazaki University
Epitaxial Materials  
Growing of Epitaxial Nanostructures by Liquid Phase Epitaxy, I. Y. Maronchuk, A. V. Kalashnikov, Kherson State Technical University In-Situ Kinetics Study of Gas Phase Formation in System Bi-GaAs-AsCl3-HCl-H2-He, V. A. Voronin, S. K. Guba, A. Y. Kulikov1, State University "Lvivska Polytechnika", 1A. F. Joffe Physical-Technical Institute, RAS
GaAs LPE Structures for High-Voltage Devices of Power Electronics, V. Voytovich1, S. Guba2, I. Maronchuk*3, S. Polyshuk4, 1Firma AT "Alkor", 2State Univ."Lviv Politechnika", 3State Tech. Univ., 4Firma "AVT-Ukrane" Physical Properties of InGaAsP/InP Grown by Molecular Beam Epitaxy with Valve Phosphorous Cracker Cell, D. H. Zhang*, W. Shi, H. Q. Zheng, C. H. Kam, X. Z. Wang, Nayang Technological University
Radiation Resistant Microcrystals and Epitaxial Layers of III-V Semiconductors, Doped by Yb and Al, I. A. Bolshakova* (Magnetic Sensor Laboratory), S. I. Krukovsky (Scientific-Industrial Enterprise "Carat") Efficiency Difference in Ga Adatom Incorporation in MBE with As2 and As4 Molecular Beams, T. Ogura*, T. Nishinaga, The University of Tokyo
The New Method of Liquid Phase Epitaxial Growth, V. Yu. Gershanov, I. Yu. Nosuleva*, S. I. Garmashov, A. R. Minyaev, Rostov State University Arsenic Pressure Dependence of Ga Desorption from MBE High Index GaAs Substrates, T. Ohachi, J. M. Feng, K. Asai, Doshisha University
Wide Bandbap Materials  
Thermodynamics and Nucleation Kinetics of InGaAlN System, R. Dhanasekaran*, P. Ramasamy, Anna University Thermal Expansion of GaN and Substrates at High Temperatures and Resulting Epitaxial Misfits, C. J. Rawn*1, J. Chaudhuri2, 1Oak Ridge National Laboratory, 2Wichita State University
Vapor-Phase Epitaxial Laterial Overgrowth of ZnSe on GaAs, M. G. Mauk*, B. W. Feyock, AstroPower, Inc. Structural Studies on Synthesized Gallium Nitride, M. S. Kumar*, P. Ramasamy, J. Kumar, Anna University
Infrared materials  
Materials for Infrared Detectors Based on Isoperiodical PbSnTeSe/BaF2 Heterostructures, O. M. Tsarenko, S. I. Ryabets, O. V. Volchanski, Kirovograd Pedagogical University Potential Application of Electrochemical Deposition Technique for the Thin Film Growth of 'Mercury Cadmium Telluride' - An Important II-VI Semiconductor - And Its Characteristic Studies, R. Kumaresan*, R. Gopalakrishnan, S. Moorthy Babu, P. Ramasamy, Anna University
Novel Materials  
Seeded Growth from Flux and Neutron Study of La1-xBaxMnO3 (0.2<x<0.5) Single Crystals, S. N. Barilo, G. L. Bychkov*, L. A. Kurnevich, S. V. Shiryaev, Institute of Solid State and Semiconductors Physics, Minsk, J. W. Lynn, L. Vasiliu-Doloc, NIST Crystal Growth and Structural Features of the Normal Paraffins, E. A. Volkova, E. V. Fedorinova, N. I. Leonyuk*, Lomonosov Moscow State University
Directional Growth of Al-Nb-X Eutectic Alloys, C. Triveio Rios*, S. Milenkovic, R. Caram, State University of Campinas Flux Growth, Composition and Structure of (Y,RE)Al3(BO3)4 Solid Solutions, E. V. Koporulina, O. V. Pilipenko, N. I. Leonyuk* (Lomonosov Moscow State University), A. V. Mokhov (Inst. of Ore Deposits, Petrography, Mineralogy Geochemistry, RAS), G. Bocelli, L. Righi (CSSD-CNR, U. Parma)
Electrochemical Growth Near the Ba 1-xKxBiO3 (x>0.5) - Ba1.7K1.3Bi2O7 Boundary and the Crystals Properties, S. V. Shiryaev*, S. N. Barilo, V. M. Finskaya, B. B. Fedotova, Institute of Solid State and Semiconductors Physics, Minsk, H. Szymczak, R. Szymczak, M. Baran, Institute of Physics, Warsaw Hydrothermal Growth of Optical Calcite on Pinacoidal Seeds, I. V. Nefyodova*, V. I. Lyutin, V. L. Borodin, P. P. Chvanski (Russian Research Inst. for Synthesis of Minerals-VNIISIMS), N. I. Leonyuk (Lomonosov Moscow State University)
Directional Solidification Processing of Eutectic Alloys from the Ni-Al-V System, Srdjan Milenkovic*, Rubens Caram Jr, State University of Campinas Hydrothermal Synthesis of Gallium Orthophosphate, A. I. Motchany, P. P .Chvanski (Russian Research Inst. for Synthesis of Minerals-VNIISIMS), N. I. Leonyuk (Lomonosov Moscow State University)
Crystal Growth Fundamentals  
Control of Microstructure Formation Using an External Current Pulsing, L. L. Zheng*, D. J. Larson, Jr., H. Zhang, State University of New York at Stony Brook Possibility for Determination of the Crystal Growth Parameters from Growth Rate Dispersion Data, A. A. Zekic*, M. M. Mitrovic, Faculty of Physics, Belgrade, Yugoslavia
Influence of Growth and Wetting Angles on Czochralski Crystal Growth, V. V. Bakovets, Institute of Inorganic Chemistry SB RAS, Akad. Lavrentyeva Crystal Nucleation and Growth by Quatarons, A. M. Askhabov, Institute of Geology of Komi SC
The New Method of Crystal Growth Mechanism Determination, V. Yu. Gershanov, I. Yu. Nosuleva*, S. I. Garmashov, A. R. Minyaev, Rostov State University Effect of an Applied Magnetic Field on Natural Convection in a Czochralski Crystal Pulling System, A. Roy* (SUNY Stony Brook), R. C. Arora, S. Roy (Indian Institute of Technology)
Numerical and Experimental Modeling of Convection in the Vertical Gradient Freeze Technique During Centrifugation, L. L. Regel, W. R. Wilcox, P. Skudarnov, Clarkson University Simulation of Dynamics of PVT Growth: ZnSe, A. Worlikar*, M. R. Overholt, S. Motakef (Cape Simulations, Inc.), C.-H. Su, N. Ramachandran (Marshall Space Flight Center)
Modeling of Unsteady Eutectic Solidification, L. L. Regel*, W. R. Wilcox, D. Popov, Clarkson University Analysis of Sapphire Light-Pipe Temperature Sensors, M. R. Overholt*, L. Vujisic, S. Motakef, Cape Simulations, Inc.
Variations of Growth Rate of Small ADP Crystals, M. M. Mitrovic, A. A. Zekic*, Faculty of Physics, Belgrade, Yugoslavia Investigation of Vibrational Control of Convective Flows in Bridgman Melt Growth Configurations, A. I. Fedoseyev*, J. I. D. Alexander1, *Univ. of Alabama in Huntsville, 1Case Western Reserve University
SiC Crystal and Epitaxial Growth  
Characterization of Polishing-Induced Surface Damage in (0001) Silicon Carbide Substrates, G. Wagner*, J. Doerschel, Institute of Crystal Growth, Berlin  
Relaxor Ferroelectrics  
Optimized Growth and Characterization of the Piezo-/Ferroelectric (1-X)Pb(Mg1/3Nb2/3)O3-XPbTiO3 [PMNT] Single Crystals, M. Dong, Z.-G. Ye*, Simon Fraser University Perovskite Phase Formation, Growth and Dielectric Studies of Lanthanum Modified 0.9Pb(Zn2/3Nb 1/3) - 0.1PbTiO3 Single Crystals, S. Venkataraj, R. Jayavel*, P. Ramasamy, Anna University
Growth and Characterization of Relaxor Ferroelectric Lanthanum Modified PZN-PT Single Crystals, S. Venkataraj, R. Jayavel*, P. Ramasamy, Anna University  
Semi-Organic Crystal Growth  
Growth and Characterization of L-Tyrosine Doped TGS Crystals, K. Meera*, S. Aravazhi, P. Ramasamy, Anna University Synthesis , Growth and Characterization of Zinc (Urea) Sulfate Single Crystals - A New NLO Material, P. M. Ushasree, R. M. Kumar1, R. Jayavel, P. Ramasamy, Anna University, 1Hindustan College of Engineering
Growth and Characterization of a New NLO Material - Zinc (Thiourea) Chloride, P. M. Ushasree, R. Jayavel, P. Ramasamy, Anna University  
Diamond Films  
Low Pressure Deposition of Diamond by Electron Cyclotron Resonance Microwave Plasma Chemical Vapor Deposition, M.-J. Chiang*, B.-H. Lung, M.-H. Hon, National Cheng-Kung University  
Halide Growth  
Automated Pulling Large Alkali-Halide Scintillation Single Crystals, B. G. Zaslavsky*, A. M. Kudin, S. I. Vasetsky, V. S. Suzdal, L. N. Shpilinskaya, T. A. Charkina, A. I. Mitichkin, L. V. Kovaleva, V .N. Zviagintsev, STC Institute for Single Crystals, NAS of Ukraine Specified Crystallization Front Forming in Industrial Production of NaI(Tl) Single Crystals of 500mm in Diameter, V. I. Goriletsky, STC Institute for Single Crystals, NAS of Ukraine
Shaped Fluoride Crystals Grown by Noncapillary Shaping Method, D. Nicoara, M. Bunoiu, A. Boltosi, A. Licz, I. Nicoara1, West University of Timisoara, 1University of Alabama in Huntsville  
Evolution of Surfaces and Interfaces  
Melt Growth of Non-Isoaxial Bicrystals of an Fe-3%Si Alloy, J. Adamek1, P. Lejcek*, Inst. of Physics, AS CR, Prague, 1Present address: Safina a.s., Jesenice The Influence of Small Temperature Oscillations on Evolution of Interfaces of Liquid Inclusions Enclosed in a Single Crystal, V. Yu. Gershanov, I. Yu. Nosuleva*, S. I. Garmashov, A. R. Minyaev, Rostov State University
Industrial Crystallization  
Crystal Growth of Piezoquartz Along Y Crystallographic Axis, I. B. Evseeva*, V. E. Khadzhy, P. P. Chvanski (Russian Research Inst. for Synthesis of Minerals-VNIISIMS) N. I. Leonyuk (Lomonosov Moscow State University)  
Bulk Growth of Semiconductors  
Growth Kinetics and Solute Transfer in a Hydrothermal Crystal Growth Process, Q. S. Chen1, A. Pal1, V. Prasad1*, D. Bliss2, 1State University of New York at Stony Brook, 2USAF Research Laboratory Three-Dimensional Simulation of Vertical Zone-Melting Crystal Growth: Symmetry Breaking to Multiple States, C. W. Lan*, M. C. Liang, National Taiwan University
Carrier Mobility Distribution in Annealed Undoped LEC InP Material, Niefeng Sun1*, Ji Zhang1, Youwen Zhao1,2, Xudong Chen1, Xiaoliang Xu2, Min Gong2, Xiang Wu3, Keyun Bi3, S. Fung2, C. D. Beling2, Yizhi Sun4, Guangping Li4, Liang Wang4, Tongnian Sun1, 1Hebei Semiconductor Research Inst., 2U. of Hong Kong, 3Chinese Acad.of Electronics, 4Electr. Mat. Res. Inst. Distribution of Te in GaSb Grown under Microgravity by Bridgman Technique under Microgravity, T. Nishinaga*, T. Nakamura, W. Ge1, C. G. Huo1, University of Tokyo, 1Institute of Physics, Chinese Academy of Sciences
Process Modelling of Industrial Crystal Growth Processes Using the Software Package CrysVUN++, R. Backofen, M. Kurz, G. Müller*, Crystal Growth Laboratory, University Erlangen Growth and Optical Characterization of Zn3As2 and ZnAs2 Single Crystals, A. V. Mudryi*, A. I. Patuk, V. M. Trukhan, I. A. Shakin, V. N. Yakimovich, Institute of Solid State and Semiconductor Physics, NASB
Generation and Propagation of Dislocations During the Necking Process in Magnetic Liquid Encapsulated Czochralski Crystal Growth of Sulfur-Doped InP, J. Y. Zhao*, M. Dudley, X. R. Huang, B. Raghothamachar, D. F. Bliss1, G. Bryant1, R. Lancto1, SUNY Stony Brook, 1USAF Research Lab Crystal Growth and Optical Properties of ZnSe Single Crystal, K. Yoshino*, M. Yoneta1, K. Ohomori1, H. Saito1, M. Ohishi1, A. Fukuyama, K. Maeda, T. Ikari, Miyazaki, University, 1Okayama University of Science
Cr2+:ZnS Mid-IR Laser Crystal: Growth Method and Laser Properties, V. N. Yakimovich, V. I. Levchenko, L. I. Postnova, V. I. Konstantinov, N. V. Kuleshov1, A. V. Podlipensky1, Institute of Solid State and Semiconductor Physics, NASB, 1International Laser Center, BSPA Defects in Vapour Phase Grown Bulk ZnSe Single Crystals, V. I. Levchenko*, V. N. Yakimovich, L. I. Postnova, V. I. Konstantinov, N. V. Kuleshov1, A. V. Podlipensky1, Institute of Solid State and Semiconductor Physics, NASB, 1International Laser Center, BSPA
Crystal Growth of Cr2+:Cd0.55Mn0.45Te Laser Materials and Passive Q-Switched for Mid-IR Lasers, V. I. Levchenko*, V. N. Yakimovich, L. I. Postnova, V. I. Konstantinov, Institute of Solid State and Semiconductor Physics, NASB  Preparation and Characterization of High Quality AgGaSe2 Single Crystals, A. V. Mudryi, V. N. Yakimovich*, V. I. Levchenko, V. I. Konstantinov, Institute of Solid State and Semiconductor Physics, NASB
Preparation and Performance of Cr:ZnSe and Co:ZnSe Saturable Absorber Q-Switches for 1.54 mm Er:Glass Laser, A. V. Podlipensky*, N. V. Kuleshov, V. G. Shcherbitsky, V. P. Mikhailov, V. I. Levchenko1, V. N. Yakimovich1, L. I. Postnova1 V. I. Konstantinov1, International Laser Center, BSPA, 1Institute of Solid State and Semiconductor Physics, NASBGrowth and Characterization of Cr2+:ZnSe Laser Crystals for Tunable Mid-IR Solid-State Lasers, N. V. Kuleshov*, A. V. Podlipensky, V. G. Shcherbitsky, V. P. Mikhailov, V. I. Levchenko1, V. N. Yakimovich1, L. I. Postnova1, V. I. Konstantinov1, International Laser Center, BSPA, 1Institute of Solid State and Semiconductor Physics, NASB
Oxide Thin Films 
Preparation and Characterization of Sol-Gel Derived Potassium Lithium Niobate Films, Zhang Hongxi*, Zhou Yan, Kam Chan Hin, Lam Yee Loy, Chan Yuen Chuen, Nanyang Technological University Studying of Transparent Conductive ZnO:Al Thin Films by RF Reactive Magnetron Sputtering, Jung-Fang Chang*, Hsiao-Lei Wang, Min-Hsiung Hon, National Cheng Kung University
Strontium Ruthenate Thin Films Grown by Solid Source MOCVD, M. C. C. Custodio*, S-Y Lee1, R. S. Feigelson, J. Reiner, M. R. Beasley, Stanford University, 1Integrated Device Technology, Inc Bulk and Surface Characteristics of Acceptor and Donor Doped Heteroepitaxial Rutile Thin Films, D. R. Burgess1, P. A. Morris Hotsenpiller2, R. S. McLean2, T. J. Anderson3, 1AIXTRON Inc., 2DuPont Co. CR&D, 3University of Florida
Growth and Applications of Doped Single Crystal Films, Yu. Zorenko, Lviv State University, M. Globus*, B. Grinyov, Institute for Single Crystals, Ukraine Patent-Clean Low-Expenditure Vacuum Technology on the Basis of LTAVD Method for Multipurpose Metallization of the Surface of Wide Class of Materials, A. Rudnev*, Lviv, Ukraine
Single Crystal Films Growth by LPE, Microstructure and Surface Resistance Study of YBa2Cu3O7-x Superconductor, S. N. Barilo*, G. L. Bychkov, A. A. Ignatenko, A. S. Shestac, V. V. Fedotova, N. A. Kalanda, Inst. of Solid State and Semiconductors Physics, H. W. Zandbergen, Delft University of Technology, A. R. Kaul, Moscow State University, V. M. Pan, V. L.Svetchnikov, Institute of Metal Physics Fabrication of Layered Ferroelectric Bismuth Titanate and Its Characterisation, N. V. Giridharan*, R. Jayavel, P. Ramasamy, Anna University

 
 
 
 
   
Wednesday AM, August 4, 1999
  
 
Session 5A – Biocrystallization
Session 5B - Crystal Growth Fundamentals
Session 5C - Industrial Crystallization
8:00
 In Situ Studies of Calcite and Brushite, C. Orme*1, H. Teng2, P. Dove2, J. J. DeYoreo1, A. Hina3, G. Nancollas3 (Invited), 1Lawrence Livermore National Laboratory, 2Georgia Inst. of Technology, 3SUNY Island Nucleation, Stability and Growth During Homoepitaxy on GaAs, D. D. Vvedensky (Invited), Imperial College, London Historical Aspects of Crystal Growth Technology, (In memoriam Robert A. Laudise 1930-1988) H. J. Scheel (Invited), Swiss Federal Institute of Technology-EPFL
8:15
8:30
 Biomineralization Mechanisms: A Kinetics and Interfacial Energy Approach, G. H. Nancollas* (Invited), W. Wu, State University of New York at Buffalo Monte Carlo Computer Modeling of Atomic Scale Crystal Growth Processes, K. A. Jackson (Invited), University of Arizona
8:45
 Advancements and Challenges in Silicon Industry, M. Banan (Invited), MEMC Electronic Materials
9:00
 Architectural Assembly of Calcium Carbonate Crystals in Biologically Inspired Collagenous Matrices, G. Falini, "G. Cimician" Universita' degli Studi, Bologna Nucleation and Growth of Supported Metal Clusters at Defect Sites on Oxide and Halide (001) Surfaces, J. A. Venables*, G. Haas1, H. Brune1, J. H. Harding2 (Invited), Arizona State University and University of Sussex, 1Inst. de Physique Expt., EPFL, 2University College, London
9:15
 Discerning Nature's Mechanism for Making Complex Biocomposite Crystals, B. L. Smith*, G. Paloczi, R. Paul Levine1, University of California, Santa Barbara, 1Hopkins Marine Station, Stanford University Applications and Industrial Production of Quartz, G. R. Johnson (Invited), Sawyer Research Products, Inc
9:30
 Molecular Mechanisms Governing Nanofabrication and Properties of Abalone Shell, M. Michenfelder*, B. Smith, J. Thompson, G. Paloezi, A. Belcher, G. Stucky, P. Hansma, D. Morse. University of California, Santa Barbara A New Kinetic Model for 3D Heterogeneous Nucleation: Comparisons with Experiments, X. Y. Liu, URPS, Bebington, Wirral, UK
9:45
 Break

 

 Application of Non-Equilibrium Monte Carlo Simulations to Glass Crystallization, M. V. Minke*, K. A. Jackson, University of Arizona Twenty Years of Un-Doped SI-GaAs, D. J. Carlson (Invited), M/A-COM, Inc.
10:00
 Break Break

 
 
 
 
   
Wednesday AM, August 4, 1999
  
 
Session 5A - Biocrystallization
Session 5B - Crystal Growth Fundamentals
Session 5C - Industrial Crystallization
10:15
 Conversations with a Mollusc - Bioinspired Strategies for Controlling Crystal Growth, B. Heywood (Invited), Keele University Selection Mechanisms for Multiple Similarity Solutions for Solidification and Melting, S. R. Coriell*, G. B. McFadden, R. F. Sekerka (Invited), NIST, Carnegie Mellon Break
10:30
 Manufacturing Yttrium Aluminum Garnet Laser Crystals, R. Becker (Invited), Litton-Airtron SYNOPTICS
10:45
 Calcium Carbonate Formation Controlled by Organized Organic Assemblies In Vivo and In Vitro, J. Aizenberg, Bell Laboratories, Lucent Technologies Diffusion-Limited Crystal Growth and Interfacial Energy Reduction at P = 1 GPa and T = 800°C in Geological Silicate Systems. Is There Any Similarity with Material Systems Processes? A. Lupulescu*, M. E. Glicksman, Rensselaer Polytechnic Institute
11:00
 Synthesis of a New Hydroxyapatite-Silica Composite Material, A. I. Villacampa, J. Ma. Universidad de Granada Modeling Dislocation Generation in the Czochralski System, S. Pendurti, H. Zhang, V. Prasad, SUNY, Stony Brook Manufacturing of Lithium Niobate Crystal Wafers, D. H. Jundt (Invited), Crystal Technology, Inc.
11:15
 Crystallization in Pharmaceutical Technology and Formulation, B. Yu. Shekunov (Invited), School of Pharmacy, University of Bradford

 

 Measurement of Temperature Fluctuations and Microscopic Growth Rates in Silicon Floating Zone under Microgravity, A. Croell*, M. Schweizer1, P. Dold1, Th. Kaiser1, M. Lichtensteiger2, K. W. Benz1, University of Alabama Huntsville, 1Universitat Freiburg, 2 NASA MSFC
11:30
   Role of Dislocations in the Inhomogeneity Formation in Crystals Growing from Solutions, I. L. Smolsky1*, N. P. Zaitseva, A. E. Voloshin, E. B. Rudneva, L. Karman, R. Ryon, Institute of Crystallography of RAS, 1Lawrence Livermore National Laboratory Manufacture of Nickel Sulphate Hexahydrate for UV Optical Filters, G. M. Loiacono*, D. N. Loiacono, J. J. Zola (Invited), Crystal Associates Inc.
11:45
   Application of the Monte Carlo Technique to Rigorous Modeling of Radiation in Crystal Growth, M. R. Overholt*, S. Motakef, Cape Simulations
12:00
 Lunch Lunch Lunch

There are no technical sessions on Wednesday afternoon.



 
 
 
 
 
 
 
   
Thursday AM, August 5, 1999
  
 
Session 6A - Bulk Growth of Semiconductors III: (Silicon/Germanium)
Session 6B - NLO, Photorefractive and Laser Crystals/LiNbO3 Growth and Processing
Session 6C - Photovoltaics/Thermal Photovoltaics
8:00
 Efficiency Opportunities in Hotzones for Silicon Crystal Growth, G. Mihalik*, B. Fickett, R. Stevenson1, P. Sabhapathy1 (Invited), Siemens Solar Industries, 1Kayex Microsctructured Materials for Nonlinear Optics, M. M. Fejer (Invited), Stanford University Epitaxial Growth of GaInAsSb for Thermophotovoltaics, C. A. Wang (Invited), Lincoln Laboratory, Massachusetts Institute of Technology
8:15
8:30
 Control and Homogenization of Oxygen Distribution in Si Crystals by the Electromagnetic Czochralski Method (EMCZ), M. Watanabe*, M. Eguchi, T. Hibiya, NEC Corporation Stoichiometeric Lithium Niobate and Lithium Tantalate; Growth and Material Potential for Optical Devices, K.Kitamura*, Y. Furukawa (Invited), National Institute for Research in Inorganic Materials Growth and Properties of Low-Band-Gap, Double-Heterostructure GaxIn1-xAs/ InAsyP1-y Thermophotovoltaic Energy Converters, 

M. Wanlass (Invited), National Renewable Energy Laboratory
8:45
 The Dislocation Behaviour in the Vicinity of Molten Zone: An X-Ray Topography Study of the Melting of Silicon, Y. Wang*, K. Kakimoto, Kyushu University
9:00
 Point Defect Concentration in a Growing Silicon Crystal, T. Higashino*, K. Tanahashi, M. Kikuchi, N. Inoue, Osaka Prefecture University Stoichiometric Mg:LiNbO3 As an Effective Material for Nonlinear Optics, Y. Furukawa*, K. Kitamura, S. Takekawa, K. Niwa, I. Munushkina1, P. Guggenheim1 (Invited), National. Institute for Research in Inorganic Materials, 1Deltronic Crystal Industries Liquid-Phase Epitaxy of Low-Bandgap III-V Antimonides for Thermophotovoltaic and Other Optoelectronic Devices, M. G. Mauk*, Z. A. Shellenbarger, J. A. Cox, P. E. Sims, O. Sulima1, A. Bett1, AstroPower, Inc., 1Fraunhofer Inst. Solar Energy
9:15
 Economic Feeder for Recharging and "Topping Off", B. Fickett*, G. Mihalik, Siemens Solar Industries The Growth of InGaAsN Using Dimethylhydrazine by Metalorganic Vapor Deposition, A. A. Allerman*, S. R. Kurtz, E. D. Jones, R. M. Sieg, J. M. Gee, Sandia National Laboratories
9:30
 Break Growth of Potassium Lithium Niobate (KLN) Single Crystals for Second Harmonic Generation (SHG) Application, L. Li, T. C. Chong, X. W. Xu (Data Storage Institute) H. Kumagai, M. Hirano (Asahi Glass Co.) A Model for Inductively Heated Silicon Tube Growth System, A. Roy*, Q. S. Chen, H. Zhang, V. Prasad, B. Mackintosh1, J. P. Kalejs1, State University of New York at Stony Brook, 1ASE Americas, Inc.
9:45
 Morphology of TSSG Grown Potassium Lithium Niobate (KLN) Crystal in Relation to Its Structure and Growth Conditions, X. Xu*, T. Chong, G. Zhang, Li Lian, Hu Peifang (Data Storage Institute) H. Kumagai, M. Hirano (Asahi Glass Co.) Growth of Thin-Layer Silicon by a Novel Chemical Vapor Transport Method, T. H. Wang*, T. F. Ciszek, National Renewable Energy Laboratory
10:00
 Break Break

 
 
 
 
   
Thursday AM, August 5, 1999
  
 
Session 6A - Bulk Growth of Semiconductors III: (Silicon/Germanium)
Session 6B - NLO, Photorefractive and Laser Crystals/Laser Crystals
Session 6C - Epitaxial Growth and Narrow Gap Materials-I
10:15
 Effect of Interface Shape and Magnetic Field on the Microstructure of Bulk Ge:Ga, S. D. Cobb*, F. R. Szofran, M. P. Volz, NASA Marshall Space Flight Center Growth and Characterization of Yttrium Calcium Oxyborate Single Crystals, B. H. T. Chai1*, Q. Ye (Invited), CREOL, University of Central Florida, 1also: Crystal Photonics, Inc. Organometallic Vapor Phase Epitaxial Growth of III/V Semiconductors: Recent Progress and Future Directions, G. B. Stringfellow (Invited), University of Utah
10:30
 Comparison of Characterization Techniques Using Antimony Doped Germanium, L. A. Keefer*, D. H. Matthiesen, Case Western Reserve University
10:45
 Diffusion Coefficient of Antimony in Germanium During the MSL-1 Spacelab Mission, D. H. Matthiesen*, L. A. Keefer, M. L. Kaforey, Case Western Reserve University High Temperature Solution Growth of Yttrium and Gadolinium Vanadate Crystals, B. A. Wechsler*, J. Rottenberg, P. M. Bridenbaugh, Crystal Associates, Inc. Epitaxial Growth of CdTe on Silicon Substrates for HgCdTe Epitaxy, I. Bhat (Invited), Rensselaer Polytechnic Institute
11:00
 Czochralski Growth of SiGe Gradient Single Crystals, N. V. Abrosimov, W. Schroder, A. Erko*1, H. Riemann, Institute of Crystal Growth, 1BESSY GmbH Convective Interaction and Process Control During Oxide Crystal Growth, H. Wilke*, D. Schwabe1, Institute of Crystal Growth, Berlin, 1University Giessen
11:15
 Growth and Segregation of Ge0.98Si0.02 Alloy in Vertical Bridgman Configuration with a Baffle, C. Marin*, A. G. Ostrogorsky, University of Alabama in Huntsville Numerical Simulation of Transport Processes During Czochralski Growth of YAG and BSO, E. M. Nunes*, M. H. N. Naraghi1, H. Zhang2, V. Prasad2, Columbia U., 1Manhattan College, 2SUNY, Stonybrook Modeling of Heat and Mass Transport During AlGaAs Growth in N2 and H2 Ambient, M. Dauelsberg, H. Hardtdegen1, P. Kaufmann, L. Kadinski*, University Erlangen-Nürnberg, 1Research Center Julich
11:30
 The Influence of Thermoelectromagnetic Convection (TEMC) on the Bridgman Growth of Semiconductors, S. Yesilyurt*, L. Vujisic, S. Motakef, F. R. Szofran1, A. Croell2, Cape Simulations, Inc., 1Marshall Flight Space Center, 2University of Alabama in Huntsville Growth and Characterization of Cr4+:Ca2GeO4 Crystals – New Near Infrared Laser Material, A. B. Bykov*, V. Petricevic, J. Steiner, Di Yao, L. L. Isaacs, R. R. Alfano, M. R. Kokta1, The City College and the Graduate School of The City U. of New York, 1Union Carbide Corporation Thickness-Composition Diagrams of Stranski-Krastanov Mode for III-V Ternary Systems, K. Nakajima*, S. Miyashita, G. Sazaki, Tohoku University
11:45
   Growth of Colquiriite-Type Single Crystals for UV Laser Applications, K. Shimamura*, S. L. Baldochi, T. Fukuda, Tohoku University InAsSb/InPSb Strained-Layer Superlattice Growth Using Metal-Organic Chemical Vapor Deposition, R. M. Biefeld*, J. D. Phillips, S. R. Kurtz, Sandia National Lab.
12:00
 Lunch Lunch Lunch

 
 
 
 
   
Thursday PM, August 5, 1999
  
 
Session 7A – Semi-Organic Crystal Growth
Session 7B – NLO, Photorefractive and Laser Crystals/NLO
Session 7C – Epitaxial Growth and Narrow Gap Materials-II
2:00
 Growth of Semi-Organic and Organic Crystals for Nonlinear and Infrared Detecting Devices, R. B. Lal*, L. Salary, J. M. Chang, W. S. Wang, M. D. Aggarwal (Invited), Alabama A&M University

 

 Mechanisms of Large-Scale Crystal Growth at High Supersaturation, N. Zaitseva*, I. Smolsky, L. Carman, R. Ryon, Lawrence Livermore National Laboratory In-Situ Kinetics Study of Gas Phase Formation in System GaP-GaAs-AsCl3-HCl-H2 by UV-Spectroscopy Method, V. A. Voronin*, S. K. Guba , M. A. Litvin1, Lviv Polytechnic State University, 1National Academy of Science, Ukraine
2:15
 Three Dimensional Flow and Mass Transfer During the Growth of Large, Single Crystals of KTP from Solution, B. Vartak*, Y. Kwon, A. Yeckel, J. J. Derby, Army HPC Research Center and U. Minnesota Fabrication of Submicrometer Structures by PSE/MBE, G. Bacchin*, T. Nishinaga, University of Tokyo
2:30
 Crystal Growth and Characterization of Sodium P-Nitrophenolate Dihydrate and Its Polymorphs, S. Brahadeeswaran, H. L. Bhat* (Invited), Indian Institute of Science High Temperature Solution Growth of Rubidium Titanyl Arsenate by Gradient Transport, J. Rottenberg*, M. P. Scripsick, P. M. Bridenbaugh, Crystal Associates, Inc. Growth of InGaPAs on GaAs Substrate by Molecular Beam Epitaxy with Valve Phosphorous Cracker Cell, X. Z. Wang, D. H. Zhang, H. Q. Zheng, S. F. Yoon, C. H. Kam, W. Shi, Nanyang Technological University
2:45
 Refractive Index Measurements and Their Application to Nonlinear Optical Materials, D. E. Zelmon*, Materials Directorate, Air Force Research Laboratory Development of a Modular, Large-Scale, High-Throughput Semi-Continuous Mode Liquid-Phase Epitaxy System, M. G. Mauk*, Z. A. Shellenbarger, J. B. McNeely, P. E. Sims, AstroPower, Inc.
3:00
 Organic-Inorganic Crystals for Nonlinear Optical Application, J. Zaccaro, A. Ibanez*, Lab. Cristallographie, CNRS Crystal Growth and Properties of AgGaTe2, P. G. Schunemann*, S. D. Setzler, T. M. Pollak, (Lockheed Martin Sanders), M. C. Ohmer, J. T. Goldstein, D. E. Zelmon (Air Force Research Laboratory) Optimization of InP Microchannel Epitaxy on Si Substrate Achieved by Addition of Upper Source, S. Naritsuka*, T. Nishinaga, M. Tachikawa1, H. Mori1, University of Tokyo, 1NTT
3:15
 Break Break Break

 
 
 
 
   
Thursday PM, August 5, 1999
  
 
Session 7A - Semi-Organic Crystal Growth
Session 7B - NLO, Photorefractive and Laser Crystals/NLO and Photorefractive Crystals
Session 7C - Substrate Crystals
3:30
 Break Break Substrates for Epitaxial Oxide Films: A Film Grower's Perspective, D. G. Schlom*, J. Lettieri, M. A. Zurbuchen, C. D. Theis, J. H. Haeni, Y. Jia, S. Wozniak (Invited), Pennsylvania State University
3:45
 Growth and Optical Properties of [(18C6)K][Cd(SCN)3] for Optical Frequency Conversion, H. Zhang*, D. E. Zelmon, Air Force Research Laboratory Crystal Growth Mechanisms of Non-Linear Optical Borate Materials, N. I. Leonyuk*, Lomonosov Moscow State University
4:00
 Growth and Characterisation of Semi Organic NLO Crystal Lithium Thiourea Chloride (LTC), M. N. Bhat*, S. M. Dharmaprakash, Mangalore University Doubly Doped Stoichiometric and Congruent Lithium Niobate for Holographic Data Storage, L. Galambos*, L. Hesselink, Stanford University Oxide Crystal Growth for Substrate Applications, G. W. Berkstresser*, C. D. Brandle, A. J. Valentino, A. J. Ven Graitis (Invited), Lucent Technologies
4:15
 Synthesis, Growth and Characterisation of L-Arginine Flouride a New Non-Linear Optical Crystal, M. Kumar1, D. R. Babu2, R. Muralidharan, R. Jayavel, P. Ramasamy, Anna University, 1Hindustan College of Engineering, 2V. Ramakrishna Polytechnic Crystal Growth of Stoichiometric LiNbO3 Using LiVO3 As Flux, L. Galambos*, A. Akella, L. Hesselink, Stanford University Growth of 3-Inch Langasite Crystal with Clear Faceting, S, Uda*, O. Vuzanov1, Mitsubishi Materials Co., Ltd., 1Fomos Inc.
4:30
   Highly Doped LiNbO3:Fe Single-Crystal Fiber Growth by LHPG, Y.-J. Lai*, J.-C. Chen, Y.-C. Lee, National Central University, Taiwans A New Approach to Growth of Bulk Single Crystal Zinc Oxide, J. E. Nause*, G. Agarwal, Cermet Inc.
4:45
   Influence of Ce and Co Doping Ions on Photorefractive Effect of SBN:61 Crystals, M. Li*, X. Xu, D. Qiu, T. Chong (Data Storage Institute), Hirohiko Kumagai (Asahi Glass Co.)  
5:00
   Growth of Large Size LBO (Li2B4O7) Single Crystals by Modified Bridgman Technique, N. Tsutsui, Y. Ino, K. Imai, N. Senguttuvan1*, M. Ishii1, Chichibu Fuji Co. Ltd, 1Shonan Institute of Technology  
7:00
Reception and Conference Banquet

 
 
 
 
   
Friday AM, August 6, 1999
  
 
Session 8A - Growth of Novel Oxides
Session 8B - NLO, Photorefractive and Laser Crystals/Oxide Crystals
Session 8C – Evolution of Surfaces and Interfaces
8:00
 Crystal Growth of Low Dimensional Oxides Related to the 2-H Perovskite Structure in Carbonate and Hydroxide Fluxes, H.-C. zur Loye*, M. D. Smith, J. B. Claridge, W. H. Henley, R. C. Layland, P. Smallwood (Invited), U. of South Carolina Traveling Solvent Growth of Ce:LSO Using the Optical Float-Zone Method, K. J. McClellan, J. M. Roper, M. T. Whittaker*, Los Alamos National Laboratory Life Near the Dead Zone: Recovery of Surfaces from Impurity Poisoning During Crystal Growth, T. A. Land*, T. L. Martin, S. Potapenko, J. J. De Yoreo, (Invited), Lawrence Livermore National Laboratory and University of California at Davis
8:15
 Light Output and Afterglow vs. Cerium Concentration for Rare Earth Oxyortho-silicate Scintillators, D. W. Cooke, K. J. McClellan*, R. E. Muenchausen, J.M. Roper, M. T. Whittaker, Los Alamos National Laboratory
8:30
 Growth and Characterization of New Aliovalent Analogue of Langasite Single Crystals for Piezoelectric Applications, K. Shimamura*, H. Takeda, H. Kawanaka, M. Kumatoriya, S. Murakami, J. Sato, M. Sato, T. Fukuda, Tohoku U. Thermal Analysis, X Ray and AFM Studies on CZ Grown Bismuth Germanate (Bi4Ge3O12) Single Crystals, A. Claude, V. Vaithianathan, P. Santhanaraghavan, R. Gopalakrishnan, P. Ramasamy*, Anna University Modeling the Coupled Effects of Transport and Kinetics During Vicinal Facet Growth, Y. Kwon*, B. Vartak, J. J. Derby, Army HPC Research Center and University of Minnesota
8:45
 Aspects of Hydrothermal Crystal Growth: Synthetic Routes to Ferroelectric Single Crystals, M. C. Gelabert* (Invited), Wagner College Crystal Growth and Light Yield Performance of Dense Ce3+ Hosts with Perovskite-Like Structure, A. G. Petrosyan*, G. O. Shirinyan, K. L. Ovanesyan, C. Pedrini1, C. Dujardin1, A. Belsky1, Armenian National Academy of Science, 1LPCML (CRNS no.5620 & Universite Claude Bernard) Modeling the Effects of Kinetic Anisotropy and Oscillatory Shear Flow on Interface Stability, S. R. Coriell, B. T. Murray1*, A. A. Chernov2, G. B. McFadden, NIST, 1SUNY Binghamton, 2Universities Space Res. Assoc. & NASA Marshall Space Flight Center
9:00
   YVO4 Single Crystal Fibers Growth by the LHPG Method, C.-H. Huang*, J.-C. Chen, National Central University, Taiwan New Developments in Modeling Facet Formation During Directional Growth of Single Crystals from the Melt, A. Virozub. Y. Liu, S. Brandon*, Technion Haifa
9:15
 Growth of Superconducting (M2Cu2O3)m(CuO2)n Crystals, V. Maltsev*, L. Leonyuk, G.-J. Babonas1, R. Szymscak1, A. Reza2, Moscow State University, 1Semiconductor Physics Institute, Lithuania, 2Institute of Physics, Warsaw, Poland Preparation, Microstructural and Electrical Characterization of SrVO3 Single Crystal Fibe, D. R. Ardila* , H. C. Basso, J. P. Andreeta, Instituto de Fisica de Sao Carlos, Universidade de Sao Paulo Post Interferometry Characterization of Step Sources by Ex-Situ AFM - Relationship Between Dislocation Density, Step Distribution and Growth Kinetics, M. McLoughlin*, R. Price, P. Halfpenny1, U. of Bath, 1U. of Strathclyde
9:30
 Break Growth and Optical Characterization of Bismuth Tellurite Crystals, S. Kumaragurubaran*, C. Subramanian, P. Ramasamy, Anna University Dynamic Simulations of Interface Morphologies in Free Dendritic Growth, H. Emmerich*, K. Kassner (Magdeburg University), C. Misbah (Universite J. Fourier), T. Ihle (Minnesota U.)
9:45
 Growth of Fine Quality Cr4+: MSO Crystal, Xu Tianhua, Peng Weiqing, Zeng Qimeng, Huang Changming, Luo Shuping, SW Inst. Tech. Phys. Break
10:00
 Break

 
 
 
 
   
Friday AM, August 6, 1999
  
 
Session 8A - New Materials and Crystal Growth Challenges
  
Session 8C - Evolution of Surfaces and Interfaces
10:15
 Single Crystal Growth of Zirconium Tungstate: A Negative Thermal Expansion Material, G. R. Kowach* (Invited), Bell Labs, Lucent Technologies Adatom Concentration on GaAs (001) During MBE Growth and Annealing, Z. Zhang, M. D. Johnson, B. Orr* (invited), University of Michigan
10:30
10:45
 Combinatorial-Type Approaches to New Materials Studies, L. F. Schneemeyer, Bell Labs, Lucent Technologies   An Atomic-Resolution Survey of Vicinal As/Ge (100) Surfaces, W. E. McMahon*, J. M. Olson, National Renewable Energy Laboratory
11:00
 Caracterization of Eutectic Alloys in the Fe-Al-Nb System, M. A. Mota, A. A. Coelho, J. M. Z. Bejarano, S. Gama, R. Caram, State University of Campinas   Numerical Analysis of Temperature Gradients and Interface Shape During Directional Solidification of Al and Al-Cu Alloy under Microgravity Conditions, A. V. Bune*, S. Sen, D. M. Stefanescu1, P. A. Curreri2, AMMSA USRA/MSFC, 1Univ. of Alabama, 2NASA/ Marshall Space Flight Cen.
11:15
 Physical Vapor Growth and Semiconducting Properties of Organic Semiconductors: Oligothiophenes and Aromatic Hydrocarbons, Ch. Kloc*, J. H. Schon, T. Siegrist, B. Batlogg, Bell Laboratories, Lucent Technologies   Growth Faces Morphology and Defects of Emerald Crystals Grown by Seeded Flux Technique, S. N. Barilo*, G. L. Bychkov, L. A. Kurnevich, S. V. Shiryaev, V. V. Fedotova (Institute of Solid State and Semiconductors Physics, Minsk) N. I. Leonyuk (Moscow State University), V. T. Koyava, T. V. Smirnova (Research Lab. "Diagem Crystals", Minsk), N. V. Kuleshov (Byelorussian Polytechnic Academy)
11:30
 An Evaluation of Single-Crystalline Organic Thin Films Grown on STS Missions, W. E. Carswell*, M. I. Zugrav, F. C. Wessling, University of Alabama in Huntsville    
11:45
Conference Ends