Program - II

MONDAY, SEPTEMBER 29, AM

8:15 AM Opening Remarks

CHARACTERIZATION

8:30 AM	"X-ray Imaging of Single Crystals and Epilayers using Synchrotron Radiation", D.R. Black, (NIST) INVITED
9:00 AM	"Recent Developments in Analysis of III-V Compounds Using Quadrupole-Based SIMS: The III-Nitrides”, M.S. Denker* and S.W. Novak (Evans East)
9:15 AM	“Crystal Growth and Characterization of Microgravity Grown CdZnTe Compound Semiconductors”, B. Raghothamachar*, H. Chung, M. Dudley, D. Larson, Jr. (SUNY)
9:30 AM	“Studies of Defect Generation an LEC and VGF Grown InP Single Crystals Using Synchrotron White Beam X-ray Topography”, H. Chung*, Y. Guo and M. Dudley (SUNY); D.F. Bliss (Rome Laboratory); R. Kalan and A. Maniatty (RPI)
9:45 AM	”Dopant Segregation and Thermal Stress Developments in a Crystal Grown by High Pressure Liquid-Encapsulated Czochralski Method”, S. Pendurti*, Y.F. Zou, H. Zhang, G.-X. Wang and V. Prasad (SUNY)
10:00 AM	Break

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MODELING

10:20 AM	“Morphological Stability of a Vicinal Face: Effects of Anisotropic Kinetics & Fluid Flow”, S.R. Coriell, (NIST), INVITED
10:50 AM	“Radiant Energy Heat Transfer Model for the Fused Silica Crucible Used in CZ Silicon Growth”, John Holder* and Richard Phillips (MEMC Electronic Materials)
11:05 AM	“Computer Simulation of Flow and Heat Transfer in Large Diameter Czochralski Growth of Silicon”, B. Sabhapathy, J. Flanagan and B. Stevenson (KAYEX)
11:20 AM	“Turbulent Flows in a Large Czochralski Silicon Melt”, T. Zhang*, F. Ladeinde and V. Prasad (SUNY)
11:35 AM	“Parallel Simulations for Czochralski Crystal Growth”, W. Chui, J. Glimm, F. Tangerman (SUNY)
11:50 AM	“A Volume Radiative Heat Transfer Model for Czochralski Crystal Growth Processes”, E.M. Nunes and M.H.N. Naraghi* (Manhattan College)
12:05 PM	Lunch

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MONDAY SEPTEMBER 29, PM

EPITAXY

2:00 PM	“Substrates for III-Nitride Epitaxy”, J.M. Redwing (Adv. Tech. Materials) INVITED
2:30 PM	“Heteroepitaxial Growth of g-Al2O3/Si by HVMOCVD”, Yude Zan, Jun Wang, Xiufen Han, Yutian Wang, Zhanguo Wang, Lanying Lin (Chinese Acad. of Science)
2:45 PM	“Study of Epitaxial Relationships and Interfacial Properties of ZnO Films Grown on Al2O3 Substrates”, C.R. Gorla*, S. Liang, N. Emanetoglu, W.E. Mayo, Y. Lu (Rutgers)
3:00 PM	"MOCVD Process of Epitaxial ZnO Films for SAW Application", N.W. Emanetoglu*, C. Gorla, Y. Liu, S. Liang and Y. Lu (Rutgers)
3:15 PM	“An Electrochromic Effect in Fullerene Thin Films”, Gregory Konesky* (Hampton Bays, NY)
3:30 PM	Break
3:50 PM	“Growth and Morphology of Si and SiGe Alloys Grown by CVD”, T. F. Kuech (U. Wisconsin) INVITED
4:20 PM	“GaInAsSb Lattice-matched to GaSb solid solutions grown by LPE from Sb-rich melts near miscibility gap”, A.G. Deryagin, N.N. Faleev, V.I. Kuchinskii, V.M. Smirnov*, G.S. Sokolovskii, V.I. Vasil’ev

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VENDOR PRESENTATIONS

4:35 PM	Logitech Products
4:45 PM	Lepel Corporation
4:55 PM	CVD Products
5:05 PM	GSC/DA-TECH Corporation
5:15 PM	Bierstube & Poster Session

MONDAY SEPTEMBER 29, EVENING

POSTERS

“Multilayer Self-Organizing InAs Islands in GaAs”, T.W. Fan*, D.H. Zhu, Q. Gong, R.Y. Xing and Z.G. Wang (Chinese Acad. of Science, Beijing)
“Crystal Growth of SrPrAlO4 a New Member of the K2NiF4 - Structure Type YBCO Substrates”, R. Uecker, P. Reiche and S. Ganschow (Institut fuer Kristallzuechtung, Berlin)
“Crystal Structure and Ferroelectric Domains in Barium Titanate - BaTiO3”, W.S. Wang*, M.D. Aggarwal, J. Choi and R. Metzl (Alabama A&M U., Normal, AL)
“Modified GaSe Crystals for Mid-IR and Far-IR NLO Applications”, N.B. Singh*, T. Rajalakshmi, R. Narayanan and V. Balakrishna (Sci. and Tech. Cntr., Northrup Grumman), M.L. Marable, P.H. Mui and R. Jones (Elect. & Systems Integration, Northrup Grumman), and N.C. Fernelius, S. Carraci, F.K. Hopkins and D.E. Zelmon (Wright Laboratory)
“Transient and Three-Dimensional Phenomena During the Horizontal Bridgman Growth of Cadmium Zinc Telluride”, Krisanne Edwards (Dept. of Chem. Eng. and Materials Science and Army HPC Rsch. Cntr., U. Minnesota) Simon Brandon (Dept. of Chem. Eng., The Technion, Haifa), and Andrew J. Yeckel and Jeffrey J. Derby* (Dept. of Chem. Eng. and Materials Science, U. Minnesota)
“Hydrodynamics of the Flux in the Top-Seeded Solution Growth of BBO Single Crystals”, D. Perlov and M. Roth (Grad. School of Applied Science, The Hebrew U.), I. Zwieback and W. Ruderman (INRAD)
“Stoichiometric Lithium Niobate and Lithium Tantalate; Their Growth and Photorefractive Properties” Kenji Kitamura and Yasunori Furukawa (NIRIM, Japan), and Irina Mnushkina (Deltronic Ind.)
“Thermal Convection in Physical Vapor Transport of Mercurous Chloride (Hg2Cl2) for Rectangular Enclosures”, G.T. Kim (Hannam U., Korea) and M.E. Glicksman (RPI)

TUESDAY, SEPTEMBER 30, AM

FUNDAMENTALS

8:15 AM	“Dynamic Scaling in Dendritic Growth”, Arnon Chait*, Vladimir Pines, Marianne Zlatkowski (NASA Lewis) INVITED
8:45 AM	“Application of Alloy Single Crystals to Studying the Effects of Gravity on Microstructural Evolution”, Douglas Corrigan* (RPI), Lynn A. Boatner (ORNL), and Gary Workman and Leonard Adcock (U. Ala. Huntsville)
9:00 AM	“Thermal Transport (Soret) Effect on MnBi/Bi Eutectic Directional Solidification Under Microgravity Conditions”, D.J. Larson, Jr. and L.L. Zheng* (SUNY)
9:15 AM	“Ab Initio Predictions of Crystal Structures”, Olaf Koenig*, Frank J.J. Leusen (Molecular Simulations, Ltd.)
9:30 AM	“Pressure and Mass Transport During Synthesis of ZnGeP2”, I. Zwieback, P. Schunemann and T. Pollak (Sanders/Lockheed-Martin)
9:45 AM	“High Temperature Crystallization in Borosilicate Systems” N.I. Leonyuk* and E.P. Shvanskiy (Moscow State U.)
10:00 AM	Break

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SEMICONDUCTORS

10:20 AM	“Bulk Growth of GaSb and GaInSb”, P.S. Dutta and A.G. Ostrogorsky* (RPI) INVITED
10:50 AM	“Crystal Growth of GaSb by the Liquid Encapsulation Melt Zone Technique Under Microgravity and Terrestrial Conditions”, Carlos R. Lopez, Jeff Mileham, Reza Abbaschian* (U. of Florida, Gainsville)
11:05 AM	“A Transient Global Model for LEC Growth of III-V Compound Crystals” H. Zhang* and V. Prasad (SUNY Stony Brook)
11:20 AM	“Design of New High Pressure Crystal Growth System for III-V Compound Crystals”, I. Jafri*1, H. Zhang2, V. Prasad2, K. Gupta1, and D. Bliss3 (1 GT Equip. Technologies, 2 SUNY Stony Brook, 3 USAF Rome Lab.)
11:35 AM	“Growth of CdZnTe Bridgman Crystals of Uniform Composition”, Y. Tao and S. Kou* ( U. Wisconsin)
11:50 AM	"Influence of Impurity (Boron, Carbon, Phosphorous) Addition on Silicon Melt - Oxygen Solubility and Evaporation”, K. Terasima*, K. Abe, S. Maeda and N. Nakanisha (Shonan Inst. Tech.)
12:05 PM	Lunch

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TUESDAY, SEPTEMBER 30, PM

LASERS AND OPTICAL MATERIALS

2:00 PM	“Growth of Fluoride Crystals for Laser Applications”, A. Cassanho (VLOC) INVITED
2:30 PM	“Czochralski Growth of Defect-Free Yttrium Orthoaluminate in Iridium Crucibles”, George Loutts* and Matthew Warren (Norfolk State U.)
2:45 PM	“Growth Studies of YAlO3 and Nd:YAlO3 Fibers Using LHPG Techniques”, S. Erdei and R. Schlect (Lasergenics Corp.)
3:00 PM	“Crystal Growth of Al2(WO4)3 by the Modified Czochralski Method”, A. Dabkowski*, H.A. Dabkowska, J.E. Greedan (McMaster U.), N. Imanaka, Y. Kobayashi, G. Adachi (Osaka U.)
3:15 PM	“Growth of High Quality Barium Apatite Crystals for Laser Applications”, George Loutts* and Lester Richardson (Norfolk State U.)
3:30 PM	Break
3:50 PM	“A Method for Identifying Host Lattices with Impurity Ions of Transient Elements with d5 -shell Capable of Lasing”, T.F. Veremeichik* and P.V. Konarev (Russian Acad. of Science)
4:05 PM	“Czochralski Growth of Rare Earth Orthosilicates --Y2SiO5 Single Crystals”, Zhang Shouda, Wang Siting, Chen Xingda, Wang Haobing, Zhong Heyu, Zhang Shunxing, Xu Jun (Chinese Acad. of Sciences)

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PROTEIN AND ORGANIC CRYSTAL GROWTH

4:20 PM	“Imperfections in Protein Crystallization”, A. Chernov (AMMSA) INVITED
4:35 PM	“Physical Vapor Growth of Centimeter Sized Crystals of a-Hexathiophene” Ch. Kloc*, P.G. Simpkins, T. Siegrist, and R.A. Laudise (Lucent Technologies)
4:50 PM	“The Clapeyron Effect and Dendritic Crystal Growth” J.C. LaCombe, M.B. Koss, L.A. Tannenhouse and M.E. Glicksman (RPI), and E.A. Winsa and D.C. Malarik (NASA Lewis)
5:05 PM	“Solvent Effects on the Habit of 3-Methoxy-4-Hydroxy Benzaldehycle (MHBA) Crystal Growth from Solution”, M.D. Aggarwal*, R.B. Lai, L.J. Salary and W.S. Wang (Alabama A&M U., Normal)

CONFERENCE DINNER

6:30 PM	Cocktail Hour
7:30 PM	Dinner
9:00 PM	“Crystal Growth: From the Laboratory Into the Earth’s Core”, Michael Bergman (Harvard/Simons Rock)

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WEDNESDAY, OCTOBER 1, AM

APPLICATIONS & NOVEL MATERIALS

8:15 AM	“Wide Band Semiconductor Materials and Devices”, Michael S. Shur (RPI) INVITED
8:45 AM	“Modern Wiresaw Technology for Large Crystals”, I. Kao*, V. Prasad, J. Li, M. Bhagavat and S. Wei (SUNY Stony Brook), J. Talbot and K. Gupta (GT Equip. Technologies)
9:00 AM	“Magneto-Optical Imaging of Micro-Indented YBa2Cu3O(7- x)Single Crystals”, Marina Turchinskaya, Debra L. Kaiser*, and Douglas T. Smith (NIST)
9:15 AM	“Synthetic Moissanite: The Ultimate Diamond Substitute”, Kurt Nassau (Nassau Consultants)
9:30 AM	“Measurement of Deep Level Optical Cross Sections in InP:Fe Using Photorefractive and Absorptive Two-Wave Mixing Techniques”, M. Chauvet*, S.A. Hawkins, G. Salamo (U. Arkansas), and D.F. Bliss and G. Bryant (Rome Lab, U.S.A.F.).
9:45 AM	“Gradient Freeze Growth of AgGa(1-x) In(x)Se2 Single Crystals” P.G. Schunemann*, Ilya Zwieback and Thomas M. Pollak (Sanders/Lockheed-Martin)
10:00 AM	Break

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NONLINEAR OPTICS & FERROELECTRICS

10:20 AM	“Current Status of Wright Laboratory Nonlinear Optical Crystal Development”, N. Fernelius (Wright Laboratory) INVITED
10:50 AM	“Novel Halides for Frequency Conversion Applications”, N.B. Singh*, T. Rajalakshmi and L.G. Casagrande (Sci.&Tech. Cntr., Northrup Grumman), S.R. Coriell (NIST), M.E. Glicksman (RPI), W.M.B. Duval (NASA LeRC) and Ching-Hua Su (NASA Marshall)
11:05 AM	“Hydrothermal Synthesis of Ferroelectric Single Crystals”, R.E. Riman* (Rutgers), L.E. McCandlish (Ceramare Corp.), M.M. Lencka (OLI Systems), S-B Cho, B.L. Gersten, M.C. Gelabert and R.A. Laudise (Lucent Technologies)
11:20 AM	“Single Crystal Growth of PbTiO3 by Hydrothermal Method at Severe Conditions”, M.C. Gelabert* (Rutgers), R.A. Laudise (Lucent Technologies), L.E. McCandlish (Ceramare Corp.), and R.E. Riman (Rutgers)
11:35 AM	“Crystal Growth and Characterization of Pyrochlore Related Pb2(NbZn)2O(6+d) Materials with High Dielectric Constant”, H.A. Dabkowska*, A. Dabkowski, J.E. Greeden and J.S. Preston (McMaster U.)
11:50 AM	“Study of Defects Resulting from Profiled Growth of LiNbO3”, L.I. Ivleva*, V.V. Voronov, N.M. Polozkov, P.A. Lykov (Russian Acad. of Sciences)
12:05 PM	Lunch, Hotel check-out, Conference ends.

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