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U.S. Citizens Only
Overview: We are currently
developing novel GaAs and GaP nonlinear optical crystals for use in
lasers operating at infrared and terahertz wavelengths.
Key Responsibilities:
Conduct research into HVPE
growth of compound semiconductors. This will include operation
of the growth reactor, characterization of the grown materials, and
analysis of the results. Work on a team to conduct the research
and to develop the process. The focus of the research will be
on understanding the mechanisms controlling crystal quality and on improving
the process to yield better crystals. Identify new directions
for and extensions of this technology. Promote the research through
journal publications, conference presentations, and involvement in the
crystal growth community. Collaborate with defense contractors,
universities, and small businesses to develop this technology.
Requirements:
- U.S. citizenship
- Ph.D. in materials
science or a related field.
- 5 years experience
in epitaxial crystal growth.
- Excellent oral and
written communication skills.
- Ability to lead
a group of scientists and technicians and provide direction for the
research program.
- Hands on experience
with epitaxial growth equipment (VPE) and materials characterization
techniques (AFM, XRD, FTIR, PL).
- Ability to work
independently and solve complex problems.
- Willingness to relocate
to Dayton, OH in 2011 is essential.
Contact: Candace Lynch,
candace.lynch@hanscom.af.mil
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