AACGE Sessions

Fundamentals of Crystal Growth
Peter Vekilov, University of Houston

Invited Speakers:
Baron Peters, Elia Vlieg, Tom Kuech, Michael Doherty, Eli Sutter, Boaz Pokroy, Kristen Fichthorn, Frank, Schreiber, Stephane Veesler, Marcel Rost, Dominique Maes, Yuki Kimura, and Katsuo Tsukamoto

The symposium on Fundamentals of Crystal Growth will provide a forum where the recent achievements in understanding the microscopic mechanisms of nucleation, growth, and control of 3D and 2D crystalline materials in classical and modern systems are aired and discussed. 

Bulk Crystal Growth
Robert Feigelson, Stanford University
Alex Ostrogorsky, Illinois Institute of Technology 

Industrial Crystal Growth Technologies and Equipment
Matt Whittaker, Gooch & Housego
Christine Richardson, Rubicon Technology, Inc.

Invited Speakers:
Drs. Helen Mayer and Cong Chen from Graftech, and Heike Larcher from Plansee

This symposium is open to all areas of crystal growth which are relevant to commercial production of crystals for industrial applications. It is open to any material, size, and growth technique with emphasis on areas of repeatability and commercial success. It welcomes talks from equipment manufacturers and suppliers involved in consumables, growth, processing, diagnostics, and end use. While the symposium is geared towards presentation by industrial speakers, researchers and engineers from universities and national laboratories who are presently in early stages of technology transfer and development are highly encouraged to present in this symposium to show-case their innovations.

Detector Materials: Scintillators and Semiconductors
Mariya Zhuraleva, University of Tennessee, Knoxville
Gautam Gundiah, APL Engineered Materials, Inc.

Invited Speakers:
Stacy Swider, Capesym, Inc. 
Anton Tremsin, University of California, Berkeley​
Chuck Melcher, University of Tennessee 
Lynn Boatner, ORNL

Scintillator and semiconductor crystals are used in radiation detectors for medical imaging, national security, high energy physics, oil well logging and space applications. A number of new halide and oxide-based candidates have been discovered in recent years that show properties superior to commercial materials. This session will cover a range of topics including new materials discovery, improved growth/characterization of crystals, in-situ growth characterization techniques, raw materials purity, defects and device performance.

Novel OMVPE Techniques and In-Situ Monitoring 
Gautam Gundiah, APL Engineered Materials, Inc.

Nonlinear Optical and Laser Host Materials
Kevin Stevens, Northrop Grumman-SYNOPTICS

Invited Speakers:
Joe Kolis, Clemson University  
Peter Schunemann, BAE Systems  
P. Shiv Halasyamani, University of Houston, Dept. of Chemistry  
David Zelmon, Air Force Research Laboratory  

There will be two related fields for the Nonlinear Optical and Laser Host Materials symposium for AACGE-21. The first field will discuss nonlinear optical materials, specifically topics related to the discovery, growth, properties, performance, and characterization of these materials. Specifically, topics can include, but are not limited to, crystal growth methods, understanding and elimination of performance limiting defects, scalability of materials, potential applications, and novel materials. Papers discussing various means of nonlinear optical conversion are welcome.

Modeling of Crystal Growth Processes
Jeffrey Derby, University of Minnesota

Invited Speaker:
Talid Sinno, University of Pennsylvania 

Mathematical analysis and computational modeling are tools of inquiry for fundamental issues in crystal growth as well as for the design, optimization, and control of crystal growth processes. This symposium encourages the submission of presentations that discuss the development of such models, their application, and the new understanding obtained. Toward emphasizing the cross-disciplinary nature of modeling, this symposium will aim to place most modeling presentations within the other ACCGE/OMVPE symposia, where modeling results may be applied to advance the understanding of the materials or growth processes that are featured in that session. Papers discussing advances in modeling approaches and techniques are also encouraged and will placed in the program according to their focus.

Biological and Biomimetic Materials
Yu Huang, UCLA
Derk Joester, Northwestern University
Elia Beniash, University of Pittsburgh 

Invited Speaker:
Trevor Douglas, Indiana University

This symposium is designed as a cross-disciplinary forum that will bring together a community broadly interested in the mechanisms by which organisms control phase transformations, impact those in the environment, and in the development of new approaches based on biological processes. Specific areas of interest include, but are not limited to crystallization pathways in organisms and in biogeochemical systems, the role of soft matter, bioinspired, and bio-enabled crystallization, and applications thereof in areas ranging from biomedicine to carbon sequestration. We recognize the importance of amorphous precursors in these processes and expressly invite contributions in this area. Contribution describing theoretical, computational, and experimental approaches are welcome, as are those describing the development of innovative tools and techniques.

Ferroelectric Crystals and Textured Ceramics (NEW)
Jun Luo, TRS Technologies
Rich Meyer, Penn State University

Invited Speakers:
Ye, Zuo-Guang, Simon Fraser University
Qiang Li, Department of Chemistry, Tsinghua University

This symposium brings together materials researchers from academia and industry to present the latest advances in ferroelectric materials, including synthesis, processing, and characterization of ferroelectric single crystals and textured ceramics. The topics of interest also include structure/domain-property relationships, phase transitions, and performance improvement through innovative material processing, composition modification and/or defect chemistry. These materials have tremendous impact on a variety of technologies, including ultrasonic transducers, actuators, sensors, MEMS devices, and energy storage/harvesting.


Joint Sessions AACGE / OMVPE

Bulk Growth and Epitaxy for Power Electronics (NEW)
Mike Dudley, Stony Brook University
Shadi Shahedipour-Sandvik, SUNY Polytechnic

There is a great deal of interest in developing wide bandgap and ultra-wide bandgap materials (e.g. SiC, III-Nitrides and Ga2O3 etc.) for application in device technologies for power switching and power amplifier applications. The symposium will cover a wide range of topics related to the recent experimental and theoretical developments of these materials; and their associated technologies and applications: bulk and thin film growth and characterization of materials; regrowth technologies, doping related methods and challenges, defect characterization and reduction techniques; growth chamber design and modeling; doping and carrier lifetime control techniques; growth of novel power device structures; novel physical mechanisms including micro plasma and current filamentation; short-term and long-term device degradation and failure mechanisms due to defects; and novel structures to assist in thermal management.


Nanocrystals, Quantum Dots, and Nanowires
Kris Bertness, NIST
Daniel Feezell, University of New Mexico

Invited Speaker: 
Dr. Lutz Geelhaar, Paul Drude Institute, Berlin

This symposium will highlight the intersection between nanotechnology and crystal growth, with an emphasis on the unique properties of semiconductors, metals and oxides when at least two dimensions shrink below a micrometer. Quantum effects and the unique device architectures possible with one-dimensional and two-dimensional morphologies often motivate work in this field, as does the high degree of crystalline perfection despite lattice-mismatched growth. Topics of interest include growth methods and mechanisms, demonstrations of unique materials properties or device designs, and advances in the challenges of characterizing nanocrystals.

III/V Nitride and Other WBG Semiconductors
Dirk Ehrentraut, SORAA
Nelson Tansu, Lehigh

Wide bandgap semiconductors have emerged as important and promising materials in a wide field of optoelectronic and electronic applications. This symposium will focus on recent developments in III-V and other wide band gap semiconductors. Specifically, the growths of new materials and beyond conventional III-Nitride semiconductors will be of great interest. New electronic and optoelectronics properties, growth methods, and device implementations of the group III-Nitride semiconductors and other wide bandgap semiconductors will be relevant for this session. The developments of bulk, thin film, nanostructures, and devices based on III-Nitride, oxide semiconductors, and oxynitride materials will be of interest.

Materials for Photovoltaics and Other Energy Technology
Ted Ciszek, Silliconsultant
John Geisz, NREL

This session focuses on both bulk and thin-film growth of crystalline materials for photovoltaics and other energy technologies. Single- and multi-crystalline silicon devices currently dominate the rapidly growing photovoltaic industry, and CdTe is also a major player. A number of other PV materials including III-V’s and CuInxGa1-xSe2 have particular advantages for specific applications, and emerging materials such as perovskites and organics are of current high research interest. These and novel materials for other cost effective power generation applications are encouraged topics for this session, as are issues related to post-deployment changes in crystal structure and defects.

Thin Film Growth, Epitaxy, and Superlattices
Andrey Krysa, University of Sheffield
Toby Garrod, II-VI epiworks

Invited Speakers:
Prof. Huiyun Liu, University College London
Prof. Luke Mawst, University of Wisconsin – Madison
Prof. Susan Babcock, University of Wisconsin – Madison

This session will focus on recent experimental and theoretical developments, as well as industrial applications in the growth, structure, and properties of thin films and crystalline superlattices. Topics of interest include kinetics and growth mechanisms, chemical reactions at surfaces, assembly at surfaces, atomic layer deposition, nanostructured surfaces, forces and interactions, ordering and phase transitions, well as studies aimed at characterizing the optical, electronic, magnetic, and mechanical properties of thin films.​

OMVPE Sessions

OMVPE of Compound Semiconductors for Optoelectronics
Sugiyama Masakazu, University of Tokyo

OMVPE finds broad applications for optoelectronic semiconductor devices for both production of developed technology and advancement of research on compound semiconductor materials, resulting in new devices. This session seeks participation from the broad OMVPE community: engineers focused on production issues and researchers developing new technology. This session will consider all compound semiconductor materials, spanning the optical spectrum, focusing on optoelectronic device issues. We seek abstracts on materials growth, characterization, and how these efforts impact device realization and performance. We also seek abstracts describing the challenges facing industrial efforts and the solutions implemented.  

OMVPE of Wide Bandgap Materials for Opto- and Power-Electronics 
Yuji Zhao, Arizona State University

Wide bandgap (WBG) semiconductors continue to evolve, contributing to applications ranging from optoelectronics and more recently the rapidly evolving field of power electronics. This session will focus on recent advances in the growth, characterization and device structures using these WBG materials in optoelectronic and power electronics applications. Materials of interest include (but are not limited to) the group III-nitrides, SiC, diamond, and oxides, as well as the growth of passivation, contact, and heat removal layers.

OMVPE of Narrow Bandgap Semiconductors
Simon Watkins, Simon Fraser University

Narrow bandgap materials have found a wide range of applications, including generation and detection of infrared light, thermoelectric energy conversion, and high-speed bipolar devices. This session will focus on growth by OMVPE, characterization, and applications of narrow gap materials and their heterostructures, including but not limited to InSb, InAs and GaSb and their solid solutions, II-VI compounds, and Bi-containing alloys.

Novel OMVPE Techniques and In-Situ Monitoring 
Matt Highland, Argonne National Laboratory 

In-situ diagnostics have become essential to understanding details of the OMVPE growth process as well as providing immediate feedback on growth progress and the reproducibility of the manufacturing process. This session will focus on applications of in-situ measurements during OMVPE growth, including the theory of measurement, elucidated science, and potential for feedback and control of growth for manufacturing.

Symposium

3rd Symposium on 2D Electronic Materials
Kurt Gaskill, NRL
Joan Redwing, Penn State

Research on the synthesis of two-dimensional layered materials is the theme of this symposium. Ultra-thin 2D layered materials offer the potential for materials properties that far exceed those of their bulk-like crystal counterparts. Materials of central importance to this symposium include the range of self-supporting two-dimensional materials that are of potential scientific and technological importance; some recent examples are carbon-based graphene, boron nitride, the metal dichalcogenides, Bi2(SeXTe1-X)3, etc. as well as heterostructural combinations. Of particular interest are contributions pertaining to the synthesis, properties, and end applications for these intriguing materials. The goal of this symposium is to bring together leading researchers actively investigating these materials to identify breakthroughs as well as issues that may inhibit further development. 
Research on the synthesis of two-dimensional layered materials is the theme of this symposium. Ultra-thin 2D layered materials offer the potential for materials properties that far exceed those of their bulk-like crystal counterparts. Materials of central importance to this symposium include the range of self-supporting two-dimensional materials that are of potential scientific and technological importance; some recent examples are carbon-based graphene, boron nitride, the metal dichalcogenides, Bi2(SeXTe1-X)3, etc. as well as heterostructural combinations. Of particular interest are contributions pertaining to the synthesis, properties, and end applications for these intriguing materials. The goal of this symposium is to bring together leading researchers actively investigating these materials to identify breakthroughs as well as issues that may inhibit further development. 

Symposium on Epitaxy of Complex Oxides (NEW)
Ho Nyung Lee, ORNL
Darrell Schlom, Cornell
Lane Martin, University of California, Berkeley ​

Epitaxial synthesis of complex-oxide materials provides unprecedented opportunities and freedom to create artificial oxide crystals with structures and properties not found in nature. The challenge of such materials synthesis is not only to know what kinds of materials to synthesize, but to knowing how to gain the atomic-scale growth control to produce “ideal” materials. As such, “synthesis science” is a critical aspect of modern materials science and a key enabling component for next-generation applications. This symposium will focus on understanding epitaxial growth processes, in situ and ex situ routes to characterize and master growth of complex materials, and on exploring the open challenges and opportunities for the greater community. In turn, these advances will be important for the continued discovery of new forms of revolutionary matter with tailored properties, especially in thin film, heterostructure, and superlattice geometries. Thus, this symposium aims to provide a forum for thin-film growers working on various epitaxial growth techniques, including molecular beam epitaxy, pulsed laser deposition, sputtering, etc. to share innovations in growth science and to promote advances in complex oxide epitaxy.





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