Executive CommitteeHistoryNewsMembershipPublicationsAACG AwardsManasevit AwardScholarship
Photo ArchivePast ConferencesACCGE21/OMVPE18AACGE-25 2015ContactMember Site

American Association for Crystal Growth
Dr. Hannah Joyce
Recipient of the 2014 Harold M. Manasevit Young Investigator Award

Dr. Kimberly Dick-Thelander
Recipient of the 2012 Harold M. Manasevit Young Investigator Award

Harold M. Manasevit Young Investigator Award
Harold M. Manasevit, November 1, 1927 – March 25, 2008, pioneered metalorganic vapor phase epitaxy (MOVPE), or as Hal and many of his colleagues called it, metalorganic chemical vapor deposition (MOCVD) while employed at Autonetics, Division of North American Rockwell in the 1960’s. Hal created the term “MOCVD” to indicate that the chemical vapor deposition process was an extremely flexible approach and could be used to deposit a wide range of materials, including epitaxial, polycrystalline, and amorphous materials. Hal was the first to publish on the growth of III-V semiconductors by MOCVD in 1968, and subsequently reported the heteroepitaxial growth of GaAs, AlAs, AlGaAs, InP, InAlAs, AlN, GaN, and GaP, etc., on sapphire and other oxide substrates. In addition, he was the first to describe the heteroepitaxial growth of II-VI and IV-VI compound semiconductors on insulators and the first to produce superconducting films on insulators.

The impact of Hal’s work on MOCVD is truly extensive. Today, MOCVD is the dominant materials technology used for the production of light-emitting diodes, injection lasers, compound-semiconductor solar cells, advanced high-speed bipolar transistor electronics, avalanche photodiodes, as well as for the deposition of various coatings and thin films.  

Award Guidelines
Past Recipients
Awardee of the 2016 Harold M. Manasevit Young Investigator Award

Dr. Tim Wernicke
​Metelorganic vapour phase epitaxy of AlGaN 
based deep UV emitters 

The 2016 Harold M. Manasevit Young Investigator Award was presented at ICMOVPE-XVIII to Tim Wernicke, Technische Universität Berlin, Institute of Solid State Physics, for extensive and significant contributions in the MOVPE growth of low-defect density, non-polar and semi-polar III-nitrides for blue and green emitters, as well as AlGaN heterostructures for deep ultraviolet LEDs.