Biological, Biomimetic, and Organic Crystallization (ACCGE)
The objective of this symposium is to bring together researchers from a diverse set of fields to discuss crystallization of a wide variety of biological and biomimetic materials. The interdisciplinary sessions will focus on state of the art characterization techniques and computational simulations used by investigators to advance our fundamental understanding of biocrystallization processes. Specific areas of interest include classical versus non-classical crystallization phenomena in the crystallization of biological materials (minerals and soft matter) and bio-inspired/biomimetic materials. Additional areas of interest include interactions at organic - inorganic interfaces, self-organizing systems, novel characterization methodologies, multiscale modeling of crystallization within both natural and synthetic biomaterials.
University of California- Riverside
“Solution-based Bio-inspired Growth of Photocatalytically Active Nanoporous Membranes and Oriented Nanowires for Water Purification and Splitting”
University of Sheffield
“The Role of Molecules and Arrays in Controlling Crystal Nucleation and Growth”
“Pre-nucleation Clusters as Solute Precursors in Phase Separation”
University of Houston
“Molecular Mechanisms of Hematin Crystallization and Inhibition by Antimalarials”
University of Warwick
"Insights from Simulation for Calcium Carbonate Nanophases, Crystals and Nucleation"
“A Classical View on A Nonclassical Crystallization Process: The PILP-Process Revisited”
Xiang Y. Liu
National University of Singapore
“Crystal Networks in Spider Silk and Silkworm Silk: From Hierarchical Structure to Ultra-Performance”
University of Ottawa
“Biological pathways to pathological apatite calcifications”
University of California San Francisco
“Can Caries-Infected Dentin and Inherited Dentin Defects be Recovered by Guided Tissue Remineralization”
Juan Manuel Garcia Ruiz
CSIC-Universidad de Granada
“Silica Biomorphs: Mineral Route to Biomimetic Self-Assembled Nanostructured Materials”
James De Yoreo
Pacific Northwest National Lab
"Self-Assembly of Peptoid Nanofibers Follows a Hierarchical Pathway to the Ordered State"
New York University
“Biomineralization Proteins: Controlling Different Aspects of Mineral Formation”
University of Cambridge
“Crystallization Modifies the Stress-Strain Behavior of Collagen Fibers”
“On Tweaking the Mineral Organic Interface: Strategies on Constructing Bulk Crystalline Materials from the Nanoscale and Below”
Johannes Gutenberg Universität
“Synthesis of Stable Amorphous Nuclei from Ionic Liquids”
Bulk Crystal Growth (ACCGE)
Aleksandar Ostrogorsky, Illinois Institute of Technology, Email: AOstrogo@iit.edu
This symposium will cover bulk crystal growth of a variety of materials from liquid and vapor phases. The topics of interest include, but are not limited to: (i) melt growth, solution growth, physical vapor transport; ii) semiconductors; (iii) innovative growth methods, e.g. shaped and detached growth and growth under applied fields; (iv) computer modeling and simulations related to bulk growth; (v) analysis of interface shape and incorporation of impurities. This cross-disciplinary session will provide an opportunity as a forum for business and academia to share research results and exchange ideas in bulk crystal growth, focusing on new materials and applications in the field of green energy, nuclear medicine, and homeland security.
“Observations of Interstitial Atoms Generation near Growth Interface Depending on Crystal Pulling Rates during CZ Silicon Growth by Detaching from the Melt”
University of Freiburg
“Detached Bridgman Growth of Germanium and Germanium-Silicon Crystals Under Microgravity”
Natalia P. Zaitseva
Lawrence Livermore National Laboratory
“Production and Application of New Solution-Grown Organic Crystals”
NASA Glenn Research Center
"Progress in Continuous Czochralski Crystal Growth for Silicon Mono with Dopant Exhibiting Segregation Coefficient Far from Unity"
Simon Fraser University
"Design, Growth, and Characterization of High-Tc and High-Performance Piezo/Ferroelectric Single Crystals"
Leibniz Institute for Crystal Growth
"SrTiO3 Bulk Crystal Growth from Melt"
Correlated Electron Crystals (ACCGE)
Strongly correlated materials exhibit exotic ground states because of a combination of atom-, electron- and spin-ordering for their narrow d- and f- orbitals, and have found uses as magnetic sensors and recording media, permanent magnets, magnetocaloric refrigerators, and superconductors. The chemical compositions of materials, crystal structural details, and the extent of dopants, disorder, inhomogeneity, and strain, are a few of the factors dictating the physical properties.
Contributions of particular interest for this symposium are those pertaining to the latest research on solid-state materials synthesis, chemistry and exploration of improved and especially new phases. The goal of this symposium is to bring together leading materials researchers who are actively investigating correlated materials and their preparations, in order to understand the fundamental physical behavior of promising functional materials.
Argonne National Laboratory
“Bond Directional Anisotropy and the Approach to a Quantum Spin Liquid in a Honeycomb Iridate”
University of Tennessee
“Strong Competition between Orbital Ordering and Itinerancy in a Frustrated Spinel Vanadate”
University of Delaware
“Synthesis, Crystal Growth, and Structural Characterization of Novel Zintl Phases of As, Sb, and Bi with the D-Metals”
Detector Materials: Scintillators and Semiconductors (ACCGE)
Stacy Swider, CapeSym, Email: firstname.lastname@example.org
The need for improved and lower cost radiation detectors used in applications such as medical imaging, nuclear detection and high energy physics has led, during the last decade, to numerous research efforts focused on the search for new and improved materials, and methods for producing them in the form of large high quality single crystals. This symposium will cover a range of topics including the growth and characterization of new or improved compounds, such as binary and ternary halides, oxides (ex. garnets), and various semiconductor and organic compounds. Special emphasis will be placed on uncovering relationships between purity, crystalline defects, crystal and post growth processing, and device performance. In addition, a special informal workshop for attendees will be organized to discuss issues brought up during the symposium and other topics of relevance to the audience.
Lawrence Berkeley National Laboratory
“Characterization of Processes Contributing to Degradation of Thallium Bromide Devices”
“Crystal Growth of 2-Inch Eu-Doped SrI2 Single Crystals for Scintillator Application."
Juan Claudio Nino
University of Florida
"Defect Engineering and Growth of Sb:Bil3 for Enhanced Nuclear Radiation Semiconductor Detectors."
Alexei V. Churilov
Radiation Monitoring Devices, Inc.
“Purification and Crystal Growth of TlBr for Room Temperature and Cooled Detectors”
Fundamentals of Crystal Growth (ACCGE)
The objective of this symposium is to bring together scientists and engineers interested in fundamentals underlying nucleation and growth of crystals from the vapor, liquid or solid phases. Relevant topics include but are not limited to: nanostructures, nucleation theory, transport phenomena, interfacial phenomena, phase behavior, interfacial attachment kinetics, protein crystallization, colloidal particles and their assembly into crystals, biomineralization, grain growth, assembly of tailored structures, pattern formation and formation of defects.
University of Houston
“Non-Classical Pathways of Nanoporous Zeolite Crystallization”
Vrije Universiteit Brussel, Belgium
“Protein Clusters and Crystals at Birth”
Tohoku University, Japan
“Exact Growth Rate Measurement of Lysozyme Crystals by Interferometry under Microgravity”
Industrial Crystal Growth Technologies and Equipment (ACCGE)
This symposium is open to all areas of crystal growth which are relevant to commercial production of crystals both small and large in size and in quantity. It is open to any crystal and to any growth technique with emphasis on areas repeatability, reliability, and sustainability. It welcomes talks from equipment manufacturers and suppliers involved in growth, processing, and diagnostics and from consumables suppliers. While the symposium is geared towards presentation by industrial speakers, researchers and engineers from universities and national laboratories who are presently in early stages of technology transfer and development are highly encouraged to present in this symposium to show-case their innovations.
National Science Foundation
"Materials Innovation Platforms: A New NSF Mid-Scale Instrumentation and User Program to Accelerate the Discovery of New Materials"
“World’s Largest Sapphire for Many Applications”
Stony Brook University
“Synchrotron Topography Studies of the Origins and Evolution of Defects in Industrially Grown 4H-SiC Substrates and Epilayers”
“High-Quality Langasite-Type Crystals for Next Generation Sensors”
Brimrose Technology Corporation
“Development of Novel Radiation Detection Materials: From R&D to Production”
Rensselaer Polytechnic Institute
“Bulk Crystals for Lighting and Display Applications”
Mangalore University, India
“Recent Progress in Hydrothermal Growth of Crystals”
“Laser Heated Pedestal Growth of Yb-Doped CaAlGdO4”
Northrop Grumman SYNOPTICS
“Growth of Faraday Rotator Materials for Optical Isolator Applications”
CTG Advanced Materials LLC
“Strategies for Improving Industrial Crystal Growth Processes”
Modeling of Crystal Growth Processes (ACCGE)
Mathematical and computational modeling promises to provide tools for inquiry of fundamental issues of crystal growth as well as for design, optimization, and control of crystal growth processes. This symposium encourages the submission of presentations on the development of such models and their application. Toward emphasizing the cross-disciplinary nature of modeling, this symposium will aim to place most modeling presentations within the other ACCGE/OMVPE symposia, where modeling results may be applied to advance the understanding of the materials or growth processes that comprise the focus of that session. Papers discussing advances in modeling approaches and techniques are also encouraged and will placed in the program according to their focus.
Instead of presenting all modeling papers as a group, we will distribute the talks into the most relevant sessions. We hope this will benefit both the authors and the audience.
Kyushu University, Fukuoka, Japan
"Three-Dimensional Analysis of Dislocation Multiplication in Single-Crystal Silicon under Accurate Control of Cooling History of Temperature"
This abstract will be presented in the Materials for Photovoltaics and Energy Technology session.
M. Ajmal Choudhary
Materials and Process Simulations, University of Bayreuth, Bayreuth, Germany
"Integrated Phase-Field Crystal Approach to Investigate Interface Tension and Nucleation Barriers"
This abstract will be presented in the Fundamentals of Crystal Growth session.
"Scale Up of DS- and CZ- Silicon Growth Processes under TMF"
This abstract will be presented in the Bulk Crystal Growth session.
Nonlinear Optical and Laser Host Materials (ACCGE)
The Nonlinear Optical and Laser Host Materials symposium will focus on two related fields. The first concerns itself with the growth, properties, processing, and device performance of nonlinear optical materials. Topics include, but are not limited to, crystal growth methods, characterization and elimination of defects, enhancements in size, properties and performance, fabrication techniques, and new materials. Papers on both birefringent and quasi-phase-matched nonlinear optical crystals are welcome. The second field covered will focus on laser host materials. Areas of interest are advances in growth techniques for laser crystals and materials for diverse laser applications. Topics include, but are not limited to, new materials, mitigation of defect issues, and scaling in crystal size, power or performance of existing materials by improved growth techniques. Papers on both single crystal and polycrystalline laser host materials are welcome. Talks from all aspects of laser materials are encouraged, as well as results and advances in laser operation.
“Thin Film Growth of Optically Active Correlated Oxides”
University of Alabama, Birmingham
“Cr and Fe Doped II-VI Mid-IR Gain Media. Fabrication Challenges and Practical Applications in Fiber-Bulk Mid-IR Laser Systems”
“LBGO, A Novel Nonlinear Optical Crystal for Ultraviolet Generation”
“Single-Crystal Fiber Optics – a Review”
III-V Nitride, SiC, and Other Wide Bandgap Materials
Wide bandgap semiconductors have emerged as important and promising materials in a wide field of optoelectronic and electronic applications. This symposium will focus on recent developments in III-V and other wide band gap semiconductors.
Polish Academy of Sciences, Institute of High-Pressure Physics
“HVPE-GaN growth on ammonothermal GaN seeds - challenges and perspectives”
“Basic Ammonothermal Growth of Gallium Nitride and Its Growth in Silver-Lined Autoclaves”
III-Vs on Silicon
The growth of III-V compound semiconductors on silicon has long been a challenge and an opportunity. This symposium invites papers that deal with all areas of the formation of III-V's on silicon, including growth, characterization, simulation, stress management and device results. This session includes all III-V materials; arsenides, phosphides and nitrides.
IMEC, Leuven, Belgium
“III/V growth study on patterned (001) Si wafer for CMOS application”
Philipps-Universität, Marburg, Germany
"OMVPE from first principles – realistic quantum-chemical models for growth and properties"
Nanocrystals, Quantum Dots and Nanowires
ACCGE Jeffrey Urban, Lawrence Berkeley National Laboratory, Email: email@example.com
This symposium will highlight the intersection between nanotechnology and crystal growth, with an emphasis on the unique properties of semiconductors, metals and oxides when at least two dimensions shrink below a micrometer. Quantum effects and the unique device architectures possible with one-dimensional and two-dimensional morphologies often motivate work in this field, as does the high degree of crystalline perfection despite lattice-mismatched growth. Topics of interest include growth methods and mechanisms, demonstrations of unique materials properties or device designs, and advances in the challenges of characterizing nanocrystals.
“A Tunable Library of Chalcogenourea Precursors to Colloidal Quantum Dots: Kinetics and Mechanism of Nucleation and Growth”
“Heterogeneous integration of vertical III-V nanowires on Si and Ge and their applications”
Materials for Photovoltaics and Energy Technology
This session focuses on the growth of crystalline materials for photovoltaics and other energy technologies, such as thermoelectrics and piezoelectric. Single- and poly-crystalline silicon devices currently dominate the rapidly growing photovoltaic industry, but CdTe, CIGS, earth abundant thin films and high efficiency III-V solar cells are emerging materials for cost effective power generation. Novel materials and devices for power generation are encouraged topics for this session.
“Thin-film Solar Cells Based on GaInN Alloys and Quantum Well Structures: Current Status and Future Prospects”
The Australian National University
“III-V Nanowires for Solar Cell Applications”
“On the Potential and Limits of Large Area Seeding for Photovoltaic Silicon”
Second Symposium on 2D Electronic Materials
Research on the synthesis of two‐dimensional layered materials is the theme of this symposium. Ultra‐thin 2D layered materials offer the potential for materials properties that far exceed those of their bulk‐like crystal counterparts. Materials of central importance to this symposium include the range of self‐supporting two‐dimensional materials that are of potential scientific and
technological importance; some recent examples are carbon‐based graphene, boron nitride, the metal dichalcogenides, Bi2(SeXTe1‐X)3, etc. as well as heterostructural combinations. Of particular interest are contributions pertaining to the synthesis, properties, and end applications for these intriguing materials. The goal of this symposium is to bring together leading researchers actively investigating these materials to identify breakthroughs as well as issues that may inhibit further development. Download the PDF.
Prof. Pulickel Ajayan, Rice U.
“Materials Science with 2D Atomic Layer Building Blocks”
Dr. Harold Cai, U. Maryland
“Plasmon-enhanced Terahertz Detection via the Photothermoelectric Effect in Epitaxial Graphene”
Dr. Sarah Eichfeld, Pennsylvania State State U.
“Going Big in 2D”
Prof. Josh Goldberger, Ohio State U.
“Group IV Semiconductors at the Atomic Scale”
Dr. Alton Horsfall, Newcastle U.
Dr. Piran Kidambi, Cambridge U.
“Elucidating CVD growth Mechanisms for 2D Materials”
Prof. Wataru Norimatsu, Nagoya U.
"Growth of Graphene and Other Novel 2D Film on SiC”
Prof. Thomas Seyller, T. U. Chemnitz
"Epitaxial Graphene on Silicon Carbide Studied by Electron Spectroscopy"
Prof. Mauricio Terrones, Pennsylvania State U.
"Building Heterostructures and Doping with Metal Chalcogenides: Tunable Properties and Possible Applications”
Prof. Boris Yakobson, Rice U.
Prof. Rosizta Yakimova, Linköping U.
“Graphene and Graphene Mediated Structures - Growth and Properties”
Thin Film Growth, Epitaxy, and Superlattices
This session will focus on recent experimental and theoretical developments, as well as industrial applications in the growth, structure, and properties of thin films. Topics of interest include kinetics and growth mechanisms, chemical reactions at surfaces, assembly at surfaces, atomic layer deposition, nanostructured surfaces, forces and interactions, ordering and phase transitions, as well as studies aimed at characterizing the optical, electronic, magnetic, and mechanical properties of thin films.
University of Tokyo
“Design and Growth of Strain-Balanced Superlattice for Efficiency Enhancement of Multi-Junction Solar Cells"