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ACCGE-20
OMVPE-17
Big Sky, Montana, USA
August 2-7, 2015
Program
ACCGE


Biological, Biomimetic, and Organic Crystallization (ACCGE)
Laurie Gower, University of Florida, Email: lgower@mse.ufl.edu
Roland Kröger, The University of York, Email:  roland.kroger@york.ac.uk 
James A. Elliot, University of Cambridge, Email:  jae1001@cam.ac.uk 

The objective of this symposium is to bring together researchers from a diverse set of fields to discuss crystallization of a wide variety of biological and biomimetic materials. The interdisciplinary sessions will focus on state of the art characterization techniques and computational simulations used by investigators to advance our fundamental understanding of biocrystallization processes. Specific areas of interest include classical versus non-classical crystallization phenomena in the crystallization of biological materials (minerals and soft matter) and bio-inspired/biomimetic materials. Additional areas of interest include interactions at organic - inorganic interfaces, self-organizing systems, novel characterization methodologies, multiscale modeling of crystallization within both natural and synthetic biomaterials.

Invited Speakers

David Kisailus
University of California- Riverside
“Solution-based Bio-inspired Growth of Photocatalytically Active Nanoporous Membranes and Oriented Nanowires for Water Purification and Splitting”

John Harding
University of Sheffield
“The Role of Molecules and Arrays in Controlling Crystal Nucleation and Growth”  

Denis Gebauer
Univ. Konstanz
“Pre-nucleation Clusters as Solute Precursors in Phase Separation”

Peter Vekilov
University of Houston
“Molecular Mechanisms of Hematin Crystallization and Inhibition by Antimalarials”

Mark Rodger
University of Warwick
"Insights from Simulation for Calcium Carbonate Nanophases, Crystals and Nucleation"

Stephan Wolf
Friedrich-Alexander-University
“A Classical View on A Nonclassical Crystallization Process: The PILP-Process Revisited”

Xiang Y. Liu
National University of Singapore
“Crystal Networks in Spider Silk and Silkworm Silk: From Hierarchical Structure to Ultra-Performance”

Sidney Omelo
University of Ottawa
“Biological pathways to pathological apatite calcifications”

Hamid Nurrohman
University of California San Francisco
“Can Caries-Infected Dentin and Inherited Dentin Defects be Recovered by Guided Tissue Remineralization”

Juan Manuel Garcia Ruiz
CSIC-Universidad de Granada
“Silica Biomorphs: Mineral Route to Biomimetic Self-Assembled Nanostructured Materials”

James De Yoreo
Pacific Northwest National Lab
"Self-Assembly of Peptoid Nanofibers Follows a Hierarchical Pathway to the Ordered State"

John Evans
New York University
“Biomineralization Proteins: Controlling Different Aspects of Mineral Formation”

Patrick Kiley
University of Cambridge
“Crystallization Modifies the Stress-Strain Behavior of Collagen Fibers”

Jong Seto
UCSF
“On Tweaking the Mineral Organic Interface: Strategies on Constructing Bulk Crystalline Materials from the Nanoscale and Below”

Wolfgang Tremel
Johannes Gutenberg Universität
“Synthesis of Stable Amorphous Nuclei from Ionic Liquids”


Bulk Crystal Growth (ACCGE)
Aleksandar Ostrogorsky, Illinois Institute of Technology, Email:  AOstrogo@iit.edu
Robert Feigelson, Stanford University, Email: feigel@stanford.edu

This symposium will cover bulk crystal growth of a variety of materials from liquid and vapor phases. The topics of interest include, but are not limited to: (i) melt growth, solution growth, physical vapor transport; ii) semiconductors; (iii) innovative growth methods, e.g. shaped and detached growth and growth under applied fields; (iv) computer modeling and simulations related to bulk growth; (v) analysis of interface shape and incorporation of impurities. This cross-disciplinary session will provide an opportunity as a forum for business and academia to share research results and exchange ideas in bulk crystal growth, focusing on new materials and applications in the field of green energy, nuclear medicine, and homeland security.

Invited Speakers

Takao Abe
Shin-Etsu Handotai
“Observations of Interstitial Atoms Generation near Growth Interface Depending on Crystal Pulling Rates during CZ Silicon Growth by Detaching from the Melt”

Arne Croell
University of Freiburg
“Detached Bridgman Growth of Germanium and Germanium-Silicon Crystals Under Microgravity”

Natalia P. Zaitseva
Lawrence Livermore National Laboratory
“Production and Application of New Solution-Grown Organic Crystals”

Joel Kearns
NASA Glenn Research Center
"Progress in Continuous Czochralski Crystal Growth for Silicon Mono with Dopant Exhibiting Segregation Coefficient Far from Unity"

Zuo-Guang Ye
Simon Fraser University
"Design, Growth, and Characterization of High-Tc and High-Performance Piezo/Ferroelectric Single Crystals"

Christo Guguschev
Leibniz Institute for Crystal Growth
"SrTiO3 Bulk Crystal Growth from Melt"


Correlated Electron Crystals (ACCGE)
Athena Safa-Sefat, Oak Ridge National Laboratory, Email: sefata@ornl.gov 
​John E. Greedan, McMaster University, Email: greedan@mcmaster.ca

Strongly correlated materials exhibit exotic ground states because of a combination of atom-, electron- and spin-ordering for their narrow d- and f- orbitals, and have found uses as magnetic sensors and recording media, permanent magnets, magnetocaloric refrigerators, and superconductors. The chemical compositions of materials, crystal structural details, and the extent of dopants, disorder, inhomogeneity, and strain, are a few of the factors dictating the physical properties.

Contributions of particular interest for this symposium are those pertaining to the latest research on solid-state materials synthesis, chemistry and exploration of improved and especially new phases. The goal of this symposium is to bring together leading materials researchers who are actively investigating correlated materials and their preparations, in order to understand the fundamental physical behavior of promising functional materials.

Invited Speakers

John Mitchell
Argonne National Laboratory
“Bond Directional Anisotropy and the Approach to a Quantum Spin Liquid in a Honeycomb Iridate”

Haidong Zhou
University of Tennessee
“Strong Competition between Orbital Ordering and Itinerancy in a Frustrated Spinel Vanadate”

Svilen Bobev
University of Delaware
“Synthesis, Crystal Growth, and Structural Characterization of Novel Zintl Phases of As, Sb, and Bi with the D-Metals”


Detector Materials: Scintillators and Semiconductors (ACCGE)
Mariya Zhuravleva, University of Tennessee, Knoxville, Email: mzhuravl@utk.edu
Stacy Swider, CapeSym, Email: swider@capesim.com

The need for improved and lower cost radiation detectors used in applications such as medical imaging, nuclear detection and high energy physics has led, during the last decade, to numerous research efforts focused on the search for new and improved materials, and methods for producing them in the form of large high quality single crystals. This symposium will cover a range of topics including the growth and characterization of new or improved compounds, such as binary and ternary halides, oxides (ex. garnets), and various semiconductor and organic compounds. Special emphasis will be placed on uncovering relationships between purity, crystalline defects, crystal and post growth processing, and device performance. In addition, a special informal workshop for attendees will be organized to discuss issues brought up during the symposium and other topics of relevance to the audience.

Invited Speakers

Edith Bourret-Courchesne
Lawrence Berkeley National Laboratory 

Amlan Datta
CapeSym
“Characterization of Processes Contributing to Degradation of Thallium Bromide Devices”

Akira Yoshikawa 
Tohoku University
“Crystal Growth of 2-Inch Eu-Doped SrI2 Single Crystals for Scintillator Application."

Juan Claudio Nino
University of Florida
"Defect Engineering and Growth of Sb:Bil3 for Enhanced Nuclear Radiation Semiconductor Detectors."

Alexei V. Churilov
Radiation Monitoring Devices, Inc.
“Purification and Crystal Growth of TlBr for Room Temperature and Cooled Detectors”


Fundamentals of Crystal Growth (ACCGE)
Peter Vekilov, University of Houston, Email: vekilov@uh.edu

The objective of this symposium is to bring together scientists and engineers interested in fundamentals underlying nucleation and growth of crystals from the vapor, liquid or solid phases. Relevant topics include but are not limited to: nanostructures, nucleation theory, transport phenomena, interfacial phenomena, phase behavior, interfacial attachment kinetics, protein crystallization, colloidal particles and their assembly into crystals, biomineralization, grain growth, assembly of tailored structures, pattern formation and formation of defects.

Invited Speakers

Jeffrey Rimer
University of Houston
“Non-Classical Pathways of Nanoporous Zeolite Crystallization”

Dominique Maes
Vrije Universiteit Brussel, Belgium
“Protein Clusters and Crystals at Birth”

Katsuo Tsukamoto
Tohoku University, Japan
“Exact Growth Rate Measurement of Lysozyme Crystals by Interferometry under Microgravity”


Industrial Crystal Growth Technologies and Equipment (ACCGE)
Matthew Whittaker, Gooch and Housego, Email: mwhittaker@goochandhousego.com 
​Govindhan Dhanaraj, Aymont Technology, Email: dhanaraj@aymont.com

This symposium is open to all areas of crystal growth which are relevant to commercial production of crystals both small and large in size and in quantity. It is open to any crystal and to any growth technique with emphasis on areas repeatability, reliability, and sustainability. It welcomes talks from equipment manufacturers and suppliers involved in growth, processing, and diagnostics and from consumables suppliers. While the symposium is geared towards presentation by industrial speakers, researchers and engineers from universities and national laboratories who are presently in early stages of technology transfer and development are highly encouraged to present in this symposium to show-case their innovations.

Invited Speakers

Sean Jones
National Science Foundation
"Materials Innovation Platforms: A New NSF Mid-Scale Instrumentation and User Program to Accelerate the Discovery of New Materials"

Chandra Khattak
ARC Energy
“World’s Largest Sapphire for Many Applications”

Michael Dudley
Stony Brook University
“Synchrotron Topography Studies of the Origins and Evolution of Defects in Industrially Grown 4H-SiC Substrates and Epilayers”

Christine Rivenbark
CKR Consulting
“High-Quality Langasite-Type Crystals for Next Generation Sensors”

Sudhir Trivedi
Brimrose Technology Corporation
“Development of Novel Radiation Detection Materials: From R&D to Production”

Partha Dutta
Rensselaer Polytechnic Institute
“Bulk Crystals for Lighting and Display Applications”

K Byrappa
Mangalore University, India
“Recent Progress in Hydrothermal Growth of Crystals”

Gisele Maxwell
Shasta Crystals
“Laser Heated Pedestal Growth of Yb-Doped CaAlGdO4”

Kevin Stevens
Northrop Grumman SYNOPTICS
“Growth of Faraday Rotator Materials for Optical Isolator Applications”

Hunter Marshall
CTG Advanced Materials LLC
“Strategies for Improving Industrial Crystal Growth Processes”


Modeling of Crystal Growth Processes (ACCGE)
​Jeffrey Derby, University of Minnesota, Email:  derby@umn.edu

Mathematical and computational modeling promises to provide tools for inquiry of fundamental issues of crystal growth as well as for design, optimization, and control of crystal growth processes. This symposium encourages the submission of presentations on the development of such models and their application. Toward emphasizing the cross-disciplinary nature of modeling, this symposium will aim to place most modeling presentations within the other ACCGE/OMVPE symposia, where modeling results may be applied to advance the understanding of the materials or growth processes that comprise the focus of that session. Papers discussing advances in modeling approaches and techniques are also encouraged and will placed in the program according to their focus.

Invited Speakers

Instead of presenting all modeling papers as a group, we will distribute the talks into the most relevant sessions.  We hope this will benefit both the authors and the audience.

Bing Gao
Kyushu University, Fukuoka, Japan
"Three-Dimensional Analysis of Dislocation Multiplication in Single-Crystal Silicon under Accurate Control of Cooling History of Temperature"
This abstract will be presented in the Materials for Photovoltaics and Energy Technology session.

M. Ajmal Choudhary
Materials and Process Simulations, University of Bayreuth, Bayreuth, Germany
"Integrated Phase-Field Crystal Approach to Investigate Interface Tension and Nucleation Barriers"
This abstract will be presented in the Fundamentals of Crystal Growth session.

Natasha Dropka
"Scale Up of DS- and CZ- Silicon Growth Processes under TMF"
This abstract will be presented in the Bulk Crystal Growth session.


Nonlinear Optical and Laser Host Materials (ACCGE)
Kevin Zawilski, BAE Systems, Email: zawilski@gmail.com 
Dieter Jundt, Gooch and Housego, Email: djundt@goochandhousego.com

The Nonlinear Optical and Laser Host Materials symposium will focus on two related fields. The first concerns itself with the growth, properties, processing, and device performance of nonlinear optical materials. Topics include, but are not limited to, crystal growth methods, characterization and elimination of defects, enhancements in size, properties and performance, fabrication techniques, and new materials. Papers on both birefringent and quasi-phase-matched nonlinear optical crystals are welcome. The second field covered will focus on laser host materials. Areas of interest are advances in growth techniques for laser crystals and materials for diverse laser applications. Topics include, but are not limited to, new materials, mitigation of defect issues, and scaling in crystal size, power or performance of existing materials by improved growth techniques. Papers on both single crystal and polycrystalline laser host materials are welcome. Talks from all aspects of laser materials are encouraged, as well as results and advances in laser operation.

​Invited Speakers

Shriram Ramanathan 
Harvard University 
“Thin Film Growth of Optically Active Correlated Oxides”

Sergey Mirov 
University of Alabama, Birmingham
“Cr and Fe Doped II-VI Mid-IR Gain Media. Fabrication Challenges and Practical Applications in Fiber-Bulk Mid-IR Laser Systems”

Yasunori Furukawa
OXIDE Corporation
“LBGO, A Novel Nonlinear Optical Crystal for Ultraviolet Generation”

James Harrington
Rutgers University
“Single-Crystal Fiber Optics – a Review”


OMVPE


Novel OMVPE Techniques and In-Situ Monitoring 
Oliver Pitts, National Research Council of Canada, Email: oliver.pitts@nrc-cnrc.gc.ca

Real-time monitoring of the reactor environment provides important information on the growing surface, and is especially useful when this information can be fed back into control parameters of the current, or subsequent, growth run. This session will focus on advances in optical and other in-situ monitoring techniques, as well as novel OMVPE techniques aimed at growing new materials or improving the uniformity, reproducibility or other characteristics of epiwafers.


OMVPE of Compound Semiconductors for Optoelectronics 
Jeff Cederberg, Sandia National Laboratory, Email: jgceder@sandia.gov

OMVPE finds broad applications for optoelectronic semiconductor devices for both production of developed technology and advancement of research on compound semiconductor materials, resulting in new devices. This session seeks participation from the broad OMVPE community: engineers focused on production issues and researchers developing new technology. This session will consider all compound semiconductor materials, spanning the optical spectrum, focusing on optoelectronic device issues. We seek abstracts on materials growth, characterization, and how these efforts impact device realization and performance. We also seek abstracts describing the challenges facing industrial efforts and the solutions implemented.  


OMVPE of Wide Bandgap Materials for Power Electronics
Dan Koleske, Sandia National Laboratory, Email: ddkoles@sandia.gov 

The use of wide bandgap (WBG) semiconductor materials for power electronics applications is rapidly evolving, due to the advantages for smaller, faster, and more energy efficient components compared to their Si-based counterparts. This session will focus on recent advances in the growth, characterization and device structures using these WBG materials in power electronics devices. Materials of interest include (but are not limited to) the group III-nitrides, SiC, diamond, and oxides, as well as the growth of passivation and heat removal layers.
Joint ACCGE/OMVPE


III-V Nitride, SiC, and Other Wide Bandgap Materials 
Dirk Ehrentraut, Soraa, Email: dehrentraut@soraa.com 
Nelson Tansu, Lehigh University, Email: tansu@lehigh.edu

Wide bandgap semiconductors have emerged as important and promising materials in a wide field of optoelectronic and electronic applications. This symposium will focus on recent developments in III-V and other wide band gap semiconductors.

Invited Speakers

Michal Bockowski
Polish Academy of Sciences, Institute of High-Pressure Physics
“HVPE-GaN growth on ammonothermal GaN seeds - challenges and perspectives”

Siddha Pimputkar
UCSB
“Basic Ammonothermal Growth of Gallium Nitride and Its Growth in Silver-Lined Autoclaves”


III-Vs on Silicon 
ACCGE Tyler Grassman, Ohio State University, Email: grassman.5@osu.edu
OMVPE Kerstin Volz, The University of Marburg, Email: volz@staff.uni-marburg.de

The growth of III-V compound semiconductors on silicon has long been a challenge and an opportunity. This symposium invites papers that deal with all areas of the formation of III-V's on silicon, including growth, characterization, simulation, stress management and device results. This session includes all III-V materials; arsenides, phosphides and nitrides.

Invited Speakers

Bernardette Kunert
IMEC, Leuven, Belgium
“III/V growth study on patterned (001) Si wafer for CMOS application”

Ralf Tonner
Philipps-Universität, Marburg, Germany
"OMVPE from first principles – realistic quantum-chemical models for growth and properties"


Nanocrystals, Quantum Dots and Nanowires 
ACCGE Jeffrey Urban, Lawrence Berkeley National Laboratory, Email: jjurban@lbl.gov
OMVPE Hoe Tan, Australian National University, Email:  hoe.tan@anu.edu.au 

This symposium will highlight the intersection between nanotechnology and crystal growth, with an emphasis on the unique properties of semiconductors, metals and oxides when at least two dimensions shrink below a micrometer. Quantum effects and the unique device architectures possible with one-dimensional and two-dimensional morphologies often motivate work in this field, as does the high degree of crystalline perfection despite lattice-mismatched growth. Topics of interest include growth methods and mechanisms, demonstrations of unique materials properties or device designs, and advances in the challenges of characterizing nanocrystals.

Invited Speakers

Jon Owen
Columbia University
“A Tunable Library of Chalcogenourea Precursors to Colloidal Quantum Dots: Kinetics and Mechanism of Nucleation and Growth”

Katsuhiro Tomioka
Hokkaido University
“Heterogeneous integration of vertical III-V nanowires on Si and Ge and their applications”​


Materials for Photovoltaics and Energy Technology
ACCGE Ted Ciszek, Siliconsultant, Email: ted_ciszek@siliconsultant.com
OMVPE Rao Tatavarti, MicroLink Devices, Email: rtatavarti@mldevices.com 

This session focuses on the growth of crystalline materials for photovoltaics and other energy technologies, such as thermoelectrics and piezoelectric. Single- and poly-crystalline silicon devices currently dominate the rapidly growing photovoltaic industry, but CdTe, CIGS, earth abundant thin films and high efficiency III-V solar cells are emerging materials for cost effective power generation. Novel materials and devices for power generation are encouraged topics for this session.

Invited Speakers

Louis Guido
Virginia Tech
“Thin-film Solar Cells Based on GaInN Alloys and Quantum Well Structures: Current Status and Future Prospects”

Hoe Tan
The Australian National University
“III-V Nanowires for Solar Cell Applications”

Nathan Stoddard
 Solar World
“On the Potential and Limits of Large Area Seeding for Photovoltaic Silicon”


Second Symposium on 2D Electronic Materials 
ACCGE Kurt Gaskill, U.S. Naval Research Laboratory, Email: kurt.gaskill@nrl.navy.mil
OMVPE: Chris Wang, MIT Lincoln Laboratory, Email: wang@ll.mit.edu 

Research on the synthesis of two‐dimensional layered materials is the theme of this symposium.  Ultra‐thin 2D layered materials offer the potential for materials properties that far exceed those of their bulk‐like crystal counterparts. Materials of central importance to this symposium include the range of self‐supporting two‐dimensional materials that are of potential scientific and
technological importance; some recent examples are carbon‐based graphene, boron nitride, the metal dichalcogenides, Bi2(SeXTe1‐X)3, etc. as well as heterostructural combinations. Of particular interest are contributions pertaining to the synthesis, properties, and end applications for these intriguing materials. The goal of this symposium is to bring together leading researchers actively investigating these materials to identify breakthroughs as well as issues that may inhibit further development.  Download the PDF.

Prof. Pulickel Ajayan, Rice U.
“Materials Science with 2D Atomic Layer Building Blocks”

Dr. Harold Cai, U. Maryland
“Plasmon-enhanced Terahertz Detection via the Photothermoelectric Effect in Epitaxial Graphene”

Dr. Sarah Eichfeld, Pennsylvania State State U.
“Going Big in 2D”

Prof. Josh Goldberger, Ohio State U.
“Group IV Semiconductors at the Atomic Scale”

Dr. Alton Horsfall, Newcastle U.

Dr. Piran Kidambi, Cambridge U.
“Elucidating CVD growth Mechanisms for 2D Materials”

Prof. Wataru Norimatsu, Nagoya U.
"Growth of Graphene and Other Novel 2D Film on SiC”

Prof. Thomas Seyller, T. U. Chemnitz
"Epitaxial Graphene on Silicon Carbide Studied by Electron Spectroscopy"

Prof. Mauricio Terrones, Pennsylvania State U.
"Building Heterostructures and Doping with Metal Chalcogenides: Tunable Properties and Possible Applications”

Prof. Boris Yakobson, Rice U.

Prof. Rosizta Yakimova, Linköping U.
“Graphene and Graphene Mediated Structures - Growth and Properties”​


Thin Film Growth, Epitaxy, and Superlattices 
Andrey Krysa, The University of Sheffield, Email: a.krysa@sheffield.ac.uk 
Rachel Goldman, University of Michigan, Email: rsgold@umich.edu​

This session will focus on recent experimental and theoretical developments, as well as industrial applications in the growth, structure, and properties of thin films. Topics of interest include kinetics and growth mechanisms, chemical reactions at surfaces, assembly at surfaces, atomic layer deposition, nanostructured surfaces, forces and interactions, ordering and phase transitions, as well as studies aimed at characterizing the optical, electronic, magnetic, and mechanical properties of thin films.

Invited Speakers

Masakazu Sugiyama
University of Tokyo
“Design and Growth of Strain-Balanced Superlattice for Efficiency Enhancement of Multi-Junction Solar Cells"


Plenary Speakers​


Juan Manuel García-Ruiz
CSIC-Universidad de Granada
“Giant Crystals of Naica: The Science Behind the Beauty”

Zlatko Sitar
North Carolina State 
"AIGaN-Based Technology: State-of-the-Art and Remaining Challenges"